Overview
The STD30NE06LT4 is an N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET process. This device is housed in a DPAK package and is designed to minimize input capacitance and gate charge, making it highly suitable for advanced high-efficiency isolated DC-DC converters. It is particularly useful in telecom and computer applications, as well as in scenarios requiring low gate charge driving.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (Vds) | 60 | V |
| Gate-Source Voltage (Vgs) | ±20 | V |
| Drain Current (Id) | 30 | A |
| Maximum Junction Temperature (Tj) | 175 | °C |
| On-State Resistance (Rds(on)) | 0.028 | Ω |
| Operating Temperature Range | -55 to 175 | °C |
| Package | DPAK | |
| Packing Type | Tape And Reel | |
| RoHS Compliance | Ecopack2 |
Key Features
- Low Threshold Drive: The MOSFET features a low threshold voltage, making it easy to drive with low gate voltages.
- Minimized Gate Charge: Developed using STMicroelectronics’ STripFET process, this device minimizes input capacitance and gate charge, enhancing efficiency in switching applications.
- High Efficiency: Suitable for use in advanced high-efficiency isolated DC-DC converters.
- Automotive Grade: The device is automotive-grade, ensuring reliability and durability in demanding environments.
- RoHS Compliance: Compliant with RoHS standards, ensuring environmental sustainability.
Applications
- Telecom and Computer Applications: Ideal for primary switch roles in high-efficiency DC-DC converters used in telecom and computer systems.
- Low Gate Charge Driving Requirements: Suitable for applications that require minimal gate charge, enhancing overall system efficiency.
- Automotive Systems: Given its automotive grade, it can be used in various automotive electronic systems requiring high reliability and efficiency.
Q & A
- What is the maximum drain-source voltage of the STD30NE06LT4 MOSFET?
The maximum drain-source voltage (Vds) is 60 V.
- What is the typical on-state resistance (Rds(on)) of the STD30NE06LT4?
The typical on-state resistance (Rds(on)) is 0.028 Ω.
- What is the maximum junction temperature for the STD30NE06LT4?
The maximum junction temperature (Tj) is 175 °C.
- What package type is the STD30NE06LT4 available in?
The STD30NE06LT4 is available in a DPAK package.
- Is the STD30NE06LT4 RoHS compliant?
Yes, the STD30NE06LT4 is RoHS compliant and comes in an Ecopack2 package.
- What are the typical applications for the STD30NE06LT4 MOSFET?
It is typically used in telecom and computer applications, and in systems requiring low gate charge driving.
- What is the maximum continuous drain current for the STD30NE06LT4 at 25°C?
The maximum continuous drain current (Id) at 25°C is 30 A.
- What is the gate-source voltage range for the STD30NE06LT4?
The gate-source voltage (Vgs) range is ±20 V.
- Is the STD30NE06LT4 suitable for automotive applications?
Yes, it is automotive-grade, making it suitable for use in automotive electronic systems.
- What is the thermal resistance junction-case (Rthj-case) for the STD30NE06LT4?
The thermal resistance junction-case (Rthj-case) is 2.14 °C/W.
- How does the STripFET process benefit the STD30NE06LT4 MOSFET?
The STripFET process minimizes input capacitance and gate charge, enhancing the device's efficiency in switching applications.
