STD30NE06L
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STMicroelectronics STD30NE06L

Manufacturer No:
STD30NE06L
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 60V 30A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD30NE06L is a high-performance N-channel power MOSFET developed by STMicroelectronics. This device is part of the STripFET™ II series, known for its advanced 'Single Feature Size™' strip-based process. This technology enhances the transistor's packing density, resulting in low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. The STD30NE06L is available in the TO-252 (DPAK) package, making it suitable for a variety of high-current and high-speed switching applications.

Key Specifications

Parameter Value Unit
Drain-source Voltage (VDS) 60 V
Drain-gate Voltage (VDGR) 60 V
Gate-source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 30 A
Continuous Drain Current (ID) at TC = 100°C 21 A
Pulsed Drain Current (IDM) 120 A
Total Dissipation at TC = 25°C 55 W
Derating Factor 0.37 W/°C
Peak Diode Recovery Voltage Slope (dv/dt) 7 V/ns
Storage Temperature (Tstg) -65 to 175 °C
Maximum Operating Junction Temperature (Tj) 175 °C
Static Drain-source On Resistance (RDS(on)) at VGS = 10 V, ID = 15 A 0.025 Ω
Gate Threshold Voltage (VGS(th)) 1 to 2.5 V

Key Features

  • High packing density for low on-resistance
  • Rugged avalanche characteristics
  • Less critical alignment steps for improved manufacturing reproducibility
  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Low gate charge
  • Available in TO-252 (DPAK) package

Applications

  • High current, high speed switching applications
  • Motor control
  • Audio amplifiers
  • Solenoid and relay drivers
  • DC-DC and DC-AC converters

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD30NE06L?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical on-resistance (RDS(on)) of the STD30NE06L?

    The typical on-resistance (RDS(on)) is 0.025 Ω at VGS = 10 V and ID = 15 A.

  3. What is the maximum continuous drain current (ID) at 25°C?

    The maximum continuous drain current (ID) at 25°C is 30 A.

  4. What is the maximum operating junction temperature (Tj)?

    The maximum operating junction temperature (Tj) is 175°C.

  5. What are the typical applications of the STD30NE06L?

    The typical applications include high current, high speed switching, motor control, audio amplifiers, solenoid and relay drivers, and DC-DC & DC-AC converters.

  6. What is the storage temperature range for the STD30NE06L?

    The storage temperature range is -65 to 175°C.

  7. What is the peak diode recovery voltage slope (dv/dt)?

    The peak diode recovery voltage slope (dv/dt) is 7 V/ns.

  8. Is the STD30NE06L 100% avalanche tested?

    Yes, the STD30NE06L is 100% avalanche tested.

  9. What package types are available for the STD30NE06L?

    The STD30NE06L is available in the TO-252 (DPAK) package.

  10. What is the derating factor for the total dissipation at 25°C?

    The derating factor is 0.37 W/°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:28mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2370 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):55W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
STD30NE06L
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MOSFET N-CH 60V 30A DPAK

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