Overview
The STD120N4F6 is an N-channel Power MOSFET developed by STMicroelectronics using their 6th generation STripFET™ DeepGATE™ technology. This device is designed for high-performance applications, particularly in the automotive sector, and is AEC-Q101 qualified. It features a very low on-resistance, low gate charge, and high avalanche ruggedness, making it suitable for demanding switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 40 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 80 | A |
| Pulsed Drain Current (IDM) | 320 | A |
| Total Dissipation at TC = 25°C (PTOT) | 110 | W |
| Storage Temperature (Tstg) | -55 to 175 | °C |
| Operating Junction Temperature (Tj) | - | °C |
| Static Drain-Source On Resistance (RDS(on)) at VGS = 10V, ID = 40A | 3.5 - 4.0 | mΩ |
| Thermal Resistance Junction-Case (Rthj-case) | 1.36 | °C/W |
| Thermal Resistance Junction-PCB (Rthj-pcb) | 50 | °C/W |
Key Features
- Designed for automotive applications and AEC-Q101 qualified.
- Very low on-resistance (RDS(on) = 3.5 - 4.0 mΩ at VGS = 10V, ID = 40A).
- Very low gate charge.
- High avalanche ruggedness.
- Low gate drive power loss.
- Standard threshold drive.
- 100% avalanche tested.
Applications
The STD120N4F6 is primarily used in switching applications, particularly in the automotive sector. Its high performance and robustness make it suitable for a variety of demanding environments.
Q & A
- What is the maximum drain-source voltage (VDS) of the STD120N4F6?
The maximum drain-source voltage (VDS) is 40 V. - What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 80 A. - What is the typical static drain-source on resistance (RDS(on))?
The typical static drain-source on resistance (RDS(on)) is 3.5 mΩ at VGS = 10V, ID = 40A. - What is the thermal resistance junction-case (Rthj-case) for the DPAK package?
The thermal resistance junction-case (Rthj-case) for the DPAK package is 1.36 °C/W. - Is the STD120N4F6 suitable for automotive applications?
Yes, the STD120N4F6 is designed for automotive applications and is AEC-Q101 qualified. - What is the maximum pulsed drain current (IDM)?
The maximum pulsed drain current (IDM) is 320 A. - What is the storage temperature range for the STD120N4F6?
The storage temperature range is -55 to 175 °C. - What is the total dissipation at TC = 25°C (PTOT)?
The total dissipation at TC = 25°C (PTOT) is 110 W. - What are the key features of the STD120N4F6?
The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss. - In which package types is the STD120N4F6 available?
The STD120N4F6 is available in DPAK and D²PAK packages.
