Overview
The STB120N4F6 is an N-channel Power MOSFET developed by STMicroelectronics using the 6th generation of STripFET™ DeepGATE™ technology. This device is designed for automotive applications and is AEC-Q101 qualified, ensuring high reliability and performance in demanding environments. The MOSFET features a new gate structure that results in the lowest RDS(on) in all packages, making it ideal for high-efficiency switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 40 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Drain Current (ID) Continuous at TC = 25°C | 80 | A |
| Drain Current (ID) Continuous at TC = 100°C | 80 | A |
| Pulse Drain Current (IDM) | 320 | A |
| Total Dissipation at TC = 25°C | 110 | W |
| Storage Temperature (Tstg) | -55 to 175 | °C |
| Operating Junction Temperature (Tj) | -55 to 175 | °C |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 40 A | 3.5 mΩ | mΩ |
| Total Gate Charge (Qg) | 65 nC | nC |
| Rise Time (tr) | 70 ns | ns |
| Output Capacitance (Coss) | 650 pF | pF |
Key Features
- Designed for automotive applications and AEC-Q101 qualified.
- Very low on-resistance (RDS(on) = 3.5 mΩ typ.).
- Very low gate charge (Qg = 65 nC).
- High avalanche ruggedness.
- Low gate drive power loss.
Applications
The STB120N4F6 is primarily used in switching applications, particularly in the automotive sector due to its AEC-Q101 qualification. It is suitable for high-efficiency power management systems, DC-DC converters, and other applications requiring low on-resistance and high current handling capabilities.
Q & A
- What is the maximum drain-source voltage of the STB120N4F6?
The maximum drain-source voltage (VDS) is 40 V.
- What is the maximum continuous drain current at 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 80 A.
- What is the typical on-resistance of the STB120N4F6?
The typical on-resistance (RDS(on)) is 3.5 mΩ at VGS = 10 V and ID = 40 A.
- What is the total gate charge of the STB120N4F6?
The total gate charge (Qg) is 65 nC.
- What is the rise time of the STB120N4F6?
The rise time (tr) is 70 ns.
- What are the package options for the STB120N4F6?
The STB120N4F6 is available in DPAK and D²PAK packages.
- Is the STB120N4F6 qualified for automotive applications?
Yes, the STB120N4F6 is AEC-Q101 qualified for automotive applications.
- What is the maximum junction temperature of the STB120N4F6?
The maximum junction temperature (Tj) is 175°C.
- What is the maximum storage temperature of the STB120N4F6?
The maximum storage temperature (Tstg) is -55 to 175°C.
- What are some key applications of the STB120N4F6?
The STB120N4F6 is used in switching applications, particularly in the automotive sector, and is suitable for high-efficiency power management systems and DC-DC converters.
