STB80N20M5
  • Share:

STMicroelectronics STB80N20M5

Manufacturer No:
STB80N20M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 61A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB80N20M5 is a high-performance N-channel power MOSFET manufactured by STMicroelectronics. It is part of the MDmesh™ M5 family, which utilizes an innovative proprietary vertical process technology. This MOSFET is designed to offer excellent electrical characteristics, making it suitable for a wide range of industrial and automotive applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)200 V
ID (Drain Current)61 A (Tc)
RDS(on) (On-State Resistance)15 mΩ
PD (Power Dissipation)190 W (Tc)
PackageD2PAK (Surface Mount)

Key Features

  • High voltage rating of 200 V, making it suitable for high-power applications.
  • Low on-state resistance (RDS(on)) of 15 mΩ, which minimizes power losses.
  • High drain current capability of 61 A (Tc), ensuring robust performance.
  • MDmesh™ M5 technology for enhanced electrical characteristics and reliability.
  • Surface mount D2PAK package for easy integration into various designs.

Applications

The STB80N20M5 is designed for use in a broad range of industrial and automotive applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Automotive systems such as battery management and power steering.
  • Industrial control systems and automation.

Q & A

  1. What is the maximum drain-source voltage of the STB80N20M5?
    The maximum drain-source voltage (VDS) is 200 V.
  2. What is the on-state resistance (RDS(on)) of the STB80N20M5?
    The on-state resistance is 15 mΩ.
  3. What is the maximum drain current (ID) of the STB80N20M5?
    The maximum drain current is 61 A (Tc).
  4. What package type is the STB80N20M5 available in?
    The STB80N20M5 is available in a D2PAK surface mount package.
  5. What technology is used in the STB80N20M5?
    The STB80N20M5 uses the MDmesh™ M5 innovative vertical process technology.
  6. What are some common applications for the STB80N20M5?
    Common applications include power supplies, motor control, automotive systems, and industrial control systems.
  7. What is the power dissipation (PD) of the STB80N20M5?
    The power dissipation is 190 W (Tc).
  8. Who is the manufacturer of the STB80N20M5?
    The STB80N20M5 is manufactured by STMicroelectronics.
  9. Where can I find detailed specifications for the STB80N20M5?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key.
  10. Is the STB80N20M5 suitable for high-power applications?
    Yes, the STB80N20M5 is designed for high-power applications due to its high voltage and current ratings.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:23mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:104 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4329 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$7.11
103

Please send RFQ , we will respond immediately.

Same Series
STP80N20M5
STP80N20M5
MOSFET N-CH 200V 61A TO220AB

Related Product By Categories

NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STGP30H60DF
STGP30H60DF
STMicroelectronics
IGBT 600V 60A 260W TO220
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
STM32G474MET6
STM32G474MET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 80LQFP
SPC58EC70E1F0C0X
SPC58EC70E1F0C0X
STMicroelectronics
IC MCU 32BIT 2MB FLASH 64ETQFP
TS944AIDT
TS944AIDT
STMicroelectronics
IC OPAMP GP 4 CIRCUIT 14SO
M24C32-DRMN3TP/K
M24C32-DRMN3TP/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
VNS3NV04D-E
VNS3NV04D-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN
TDA7708LX32
TDA7708LX32
STMicroelectronics
ADD INFOTAINMENT