STB80N20M5
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STMicroelectronics STB80N20M5

Manufacturer No:
STB80N20M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 61A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB80N20M5 is a high-performance N-channel power MOSFET manufactured by STMicroelectronics. It is part of the MDmesh™ M5 family, which utilizes an innovative proprietary vertical process technology. This MOSFET is designed to offer excellent electrical characteristics, making it suitable for a wide range of industrial and automotive applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)200 V
ID (Drain Current)61 A (Tc)
RDS(on) (On-State Resistance)15 mΩ
PD (Power Dissipation)190 W (Tc)
PackageD2PAK (Surface Mount)

Key Features

  • High voltage rating of 200 V, making it suitable for high-power applications.
  • Low on-state resistance (RDS(on)) of 15 mΩ, which minimizes power losses.
  • High drain current capability of 61 A (Tc), ensuring robust performance.
  • MDmesh™ M5 technology for enhanced electrical characteristics and reliability.
  • Surface mount D2PAK package for easy integration into various designs.

Applications

The STB80N20M5 is designed for use in a broad range of industrial and automotive applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Automotive systems such as battery management and power steering.
  • Industrial control systems and automation.

Q & A

  1. What is the maximum drain-source voltage of the STB80N20M5?
    The maximum drain-source voltage (VDS) is 200 V.
  2. What is the on-state resistance (RDS(on)) of the STB80N20M5?
    The on-state resistance is 15 mΩ.
  3. What is the maximum drain current (ID) of the STB80N20M5?
    The maximum drain current is 61 A (Tc).
  4. What package type is the STB80N20M5 available in?
    The STB80N20M5 is available in a D2PAK surface mount package.
  5. What technology is used in the STB80N20M5?
    The STB80N20M5 uses the MDmesh™ M5 innovative vertical process technology.
  6. What are some common applications for the STB80N20M5?
    Common applications include power supplies, motor control, automotive systems, and industrial control systems.
  7. What is the power dissipation (PD) of the STB80N20M5?
    The power dissipation is 190 W (Tc).
  8. Who is the manufacturer of the STB80N20M5?
    The STB80N20M5 is manufactured by STMicroelectronics.
  9. Where can I find detailed specifications for the STB80N20M5?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key.
  10. Is the STB80N20M5 suitable for high-power applications?
    Yes, the STB80N20M5 is designed for high-power applications due to its high voltage and current ratings.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:23mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:104 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4329 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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