Overview
The STB75NF75T4 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the STripFET™ II series, which is designed to minimize input capacitance and gate charge, making it highly suitable for advanced high-efficiency, high-frequency isolated DC-DC converters. The STB75NF75T4 is available in the D²PAK package and is intended for applications requiring low gate drive requirements.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 75 | V |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 75 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 80 | A |
| Continuous Drain Current (ID) at TC = 100°C | 70 | A |
| Pulsed Drain Current (IDM) | 320 | A |
| Total Dissipation at TC = 25°C | 300 | W |
| Static Drain-Source On Resistance (RDS(on)) | < 0.011 Ω | Ω |
| Gate Threshold Voltage (VGS(th)) | 2 - 4 | V |
| Thermal Resistance Junction-Case (RthJC) | 0.5 | °C/W |
| Thermal Resistance Junction-Ambient (RthJA) | 62.5 | °C/W |
Key Features
- Exceptional dv/dt Capability: The STB75NF75T4 has been designed to handle high dv/dt conditions, making it suitable for high-frequency applications.
- 100% Avalanche Tested: Ensures robustness and reliability under extreme conditions.
- Low Input Capacitance and Gate Charge: Minimized input capacitance and gate charge reduce switching losses and improve overall efficiency.
- High Current Capability: Supports continuous drain current up to 80A and pulsed current up to 320A.
- Low On-Resistance: With a static drain-source on resistance of less than 0.011 Ω, it minimizes power losses during operation.
- ECOPACK® Packages: Available in lead-free packages that meet environmental standards, marked with JEDEC Standard JESD97 compliance.
Applications
- Switching Applications: Ideal for primary switch roles in high-efficiency, high-frequency isolated DC-DC converters.
- Telecom and Computer Applications: Suitable for power management in telecommunications and computer systems.
- Low Gate Drive Requirements: Applicable in any scenario where low gate drive is necessary.
Q & A
- What is the maximum drain-source voltage of the STB75NF75T4?
The maximum drain-source voltage (VDS) is 75V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 80A.
- What is the typical static drain-source on resistance (RDS(on))?
The typical static drain-source on resistance (RDS(on)) is less than 0.011 Ω.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(th)) ranges from 2 to 4 V.
- What are the thermal resistance values for junction-case and junction-ambient?
The thermal resistance junction-case (RthJC) is 0.5 °C/W, and the thermal resistance junction-ambient (RthJA) is 62.5 °C/W.
- What is the maximum pulse current rating?
The maximum pulsed drain current (IDM) is 320 A.
- What are the typical switching times for turn-on, rise, turn-off, and fall?
The typical switching times are: turn-on delay time (td(on)) = 25 ns, rise time (tr) = 100 ns, turn-off delay time (td(off)) = 66 ns, and fall time (tf) = 30 ns.
- Is the STB75NF75T4 available in lead-free packages?
- What are the common applications for the STB75NF75T4?
- What is the maximum operating junction temperature?
