STP75NF75FP
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STMicroelectronics STP75NF75FP

Manufacturer No:
STP75NF75FP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 75V 80A TO220FP
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Product Introduction

Overview

The STP75NF75FP is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the advanced STripFET™ II process. This MOSFET is optimized for high-efficiency, high-frequency applications, particularly in isolated DC-DC converters for telecom and computer systems. It is known for its exceptional dv/dt capability and low gate drive requirements, making it suitable for a variety of switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 75 V
Gate-Source Voltage (VGS) ±20 V
Drain Current (ID) 80 A
Static Drain-Source On-State Resistance (RDS(on)) <0.011 Ω
Total Gate Charge (Qg) 117 nC
Maximum Junction Temperature (Tj) 175 °C
Maximum Power Dissipation (Pd) 300 W
Turn-on Delay Time (td(on)) 25 ns
Rise Time (tr) 100 ns
Output Capacitance (Coss) 730 pF
Package TO-220FP

Key Features

  • Exceptional dv/dt capability, making it suitable for high-frequency applications.
  • Low gate drive requirements, facilitating easy control and reduced power consumption.
  • 100% avalanche tested, ensuring robust device performance and reliable operation.
  • Minimum lot-to-lot variations, providing consistent performance across different batches.
  • High efficiency and low on-state resistance, ideal for advanced DC-DC converters.

Applications

  • Primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters.
  • Telecom and computer applications requiring high power density and efficiency.
  • Any applications with low gate drive requirements.
  • Switching applications where high reliability and robust performance are critical.

Q & A

  1. What is the maximum drain-source voltage of the STP75NF75FP MOSFET?

    The maximum drain-source voltage (VDS) is 75 V.

  2. What is the maximum drain current (ID) of the STP75NF75FP?

    The maximum drain current (ID) is 80 A.

  3. What is the typical on-state resistance (RDS(on)) of the STP75NF75FP?

    The typical on-state resistance (RDS(on)) is less than 0.011 Ω.

  4. What is the total gate charge (Qg) of the STP75NF75FP?

    The total gate charge (Qg) is 117 nC.

  5. What is the maximum junction temperature (Tj) of the STP75NF75FP?

    The maximum junction temperature (Tj) is 175 °C.

  6. What are the typical applications of the STP75NF75FP MOSFET?

    Typical applications include primary switches in high-efficiency DC-DC converters for telecom and computer systems, and other switching applications with low gate drive requirements.

  7. What is the package type of the STP75NF75FP MOSFET?

    The package type is TO-220FP.

  8. Is the STP75NF75FP 100% avalanche tested?

    Yes, the STP75NF75FP is 100% avalanche tested.

  9. What are the key features of the STripFET™ II process used in the STP75NF75FP?

    The key features include exceptional dv/dt capability, low gate drive requirements, and minimum lot-to-lot variations for robust device performance.

  10. Is the STP75NF75FP still in production?

    No, the STP75NF75FP is obsolete and no longer manufactured. Available substitutes can be found through suppliers like DigiKey.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:160 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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