STP75NF75
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STMicroelectronics STP75NF75

Manufacturer No:
STP75NF75
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 75V 80A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP75NF75 is an N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET™ II process. This MOSFET is designed to minimize input capacitance and gate charge, making it highly suitable for advanced high-efficiency, high-frequency isolated DC-DC converters in Telecom and Computer applications. It is also ideal for any applications requiring low gate drive requirements.

Key Specifications

Parameter Value Unit
Type of Transistor MOSFET
Type of Control Channel N-Channel
Maximum Drain-Source Voltage (VDS) 75 V
Maximum Gate-Source Voltage (VGS) 20 V
Maximum Drain Current (ID) 80 A
Maximum Drain-Source On-State Resistance (RDS(on)) < 0.011 Ω
Total Gate Charge (Qg) 117 nC
Rise Time (tr) 100 ns
Output Capacitance (Coss) 730 pF
Maximum Junction Temperature (Tj) 175 °C
Package TO-220, TO-220FP, D²PAK

Key Features

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters
  • Ideal for applications with low gate drive requirements
  • Minimum lot-to-lot variations for robust device performance and reliable operation

Applications

  • Switching applications
  • Advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications
  • Any applications requiring low gate drive requirements

Q & A

  1. What is the maximum drain-source voltage of the STP75NF75 MOSFET?

    The maximum drain-source voltage (VDS) is 75 V.

  2. What is the maximum drain current of the STP75NF75 MOSFET?

    The maximum drain current (ID) is 80 A.

  3. What is the typical on-state resistance of the STP75NF75 MOSFET?

    The typical on-state resistance (RDS(on)) is less than 0.011 Ω.

  4. What are the package options available for the STP75NF75 MOSFET?

    The STP75NF75 is available in TO-220, TO-220FP, and D²PAK packages.

  5. What is the maximum junction temperature of the STP75NF75 MOSFET?

    The maximum junction temperature (Tj) is 175 °C.

  6. What are the key features of the STP75NF75 MOSFET?

    The key features include exceptional dv/dt capability, 100% avalanche testing, low input capacitance and gate charge, and suitability for high-efficiency DC-DC converters.

  7. What applications is the STP75NF75 MOSFET suitable for?

    The STP75NF75 is suitable for switching applications, high-efficiency DC-DC converters in Telecom and Computer applications, and any applications with low gate drive requirements.

  8. What is the total gate charge of the STP75NF75 MOSFET?

    The total gate charge (Qg) is 117 nC.

  9. What is the rise time of the STP75NF75 MOSFET?

    The rise time (tr) is 100 ns.

  10. Is the STP75NF75 MOSFET RoHS compliant?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:160 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STP75NF75
STP75NF75
MOSFET N-CH 75V 80A TO220AB
STP75NF75FP
STP75NF75FP
MOSFET N-CH 75V 80A TO220FP

Similar Products

Part Number STP75NF75 STP76NF75
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 40A, 10V 11mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V 160 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 25 V 3700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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