Overview
The STB75NF75LT4 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the unique STripFET™ II process. This MOSFET is optimized to minimize input capacitance and gate charge, making it highly suitable for advanced high-efficiency, high-frequency isolated DC-DC converters. It is particularly recommended for applications in the telecom and computer industries, as well as any scenario requiring low gate drive requirements.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 75 | V |
| Gate-Source Voltage (VGS) | ±15 | V |
| Continuous Drain Current (ID) at TC = 25°C | 75 | A |
| Continuous Drain Current (ID) at TC = 100°C | 70 | A |
| Pulsed Drain Current (IDM) | 300 | A |
| Total Dissipation at TC = 25°C | 300 | W |
| Derating Factor | 2 | W/°C |
| Peak Diode Recovery Voltage Slope (dv/dt) | 10 | V/ns |
| Single Pulse Avalanche Energy (EAS) | 680 | mJ |
| Operating Junction Temperature (TJ) | -55 to 175 | °C |
| Storage Temperature (Tstg) | -55 to 175 | °C |
| Thermal Resistance Junction-Case (RthJC) | 0.5 | °C/W |
| Thermal Resistance Junction-Ambient (RthJA) | 62.5 | °C/W |
| Static Drain-Source On Resistance (RDS(on)) at VGS = 10V, ID = 37.5A | 0.009 | Ω |
| Gate Threshold Voltage (VGS(th)) | 1 to 2.5 | V |
Key Features
- Exceptional dv/dt capability
- 100% avalanche tested
- Low threshold drive
- Minimized input capacitance and gate charge through STripFET™ II process
- Suitable for high-efficiency, high-frequency isolated DC-DC converters
- Low gate drive requirements
- ECOPACK® packages with Lead-free second level interconnect
Applications
- Advanced high-efficiency, high-frequency isolated DC-DC converters
- Telecom applications
- Computer applications
- Any applications with low gate drive requirements
Q & A
- What is the maximum drain-source voltage (VDS) of the STB75NF75LT4?
The maximum drain-source voltage (VDS) is 75 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 75 A.
- What is the thermal resistance junction-case (RthJC) of the STB75NF75LT4?
The thermal resistance junction-case (RthJC) is 0.5 °C/W.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is from 1 to 2.5 V.
- Is the STB75NF75LT4 suitable for high-frequency applications?
Yes, it is suitable for high-efficiency, high-frequency isolated DC-DC converters.
- What package type is the STB75NF75LT4 available in?
The STB75NF75LT4 is available in the D2PAK package.
- Is the STB75NF75LT4 RoHS compliant?
Yes, the STB75NF75LT4 is RoHS compliant and comes in ECOPACK® packages.
- What is the maximum operating junction temperature (TJ) of the STB75NF75LT4?
The maximum operating junction temperature (TJ) is 175 °C.
- What is the single pulse avalanche energy (EAS) of the STB75NF75LT4?
The single pulse avalanche energy (EAS) is 680 mJ.
- What are the typical applications of the STB75NF75LT4?
Typical applications include telecom, computer, and any applications with low gate drive requirements.
