STB35N65DM2
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STMicroelectronics STB35N65DM2

Manufacturer No:
STB35N65DM2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 28A D2PAK
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The STB35N65DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh DM2 fast-recovery diode series. This device is designed to offer very low recovery charge (Qrr) and recovery time (trr), making it suitable for high-efficiency applications. The STB35N65DM2 is housed in a D2PAK package, which provides good thermal performance and is widely used in power electronics.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
RDS(on) (Drain-Source On-Resistance) 0.093 Ω
ID (Drain Current) 32 A
Package D2PAK -
Qrr (Recovery Charge) Very Low -
trr (Recovery Time) Very Low -

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Low RDS(on) of 0.093 Ω, which minimizes power losses and enhances efficiency.
  • High drain current of 32 A, supporting demanding power requirements.
  • Very low recovery charge (Qrr) and recovery time (trr), contributing to high switching performance.
  • D2PAK package for good thermal dissipation and compact design.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power systems and automation.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-efficiency power management in various electronic devices.

Q & A

  1. What is the maximum drain-source voltage of the STB35N65DM2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical drain-source on-resistance (RDS(on)) of the STB35N65DM2?

    The typical RDS(on) is 0.093 Ω.

  3. What is the maximum drain current (ID) of the STB35N65DM2?

    The maximum drain current is 32 A.

  4. In what package is the STB35N65DM2 available?

    The STB35N65DM2 is available in a D2PAK package.

  5. What are the key benefits of the low recovery charge (Qrr) and recovery time (trr) in the STB35N65DM2?

    The low Qrr and trr enhance the switching performance and efficiency of the MOSFET.

  6. What types of applications is the STB35N65DM2 suitable for?

    The STB35N65DM2 is suitable for power supplies, motor control, industrial power systems, renewable energy systems, and high-efficiency power management.

  7. How does the D2PAK package benefit the thermal performance of the STB35N65DM2?

    The D2PAK package provides good thermal dissipation, helping to maintain the device's performance and reliability under high-power conditions.

  8. What is the significance of the MDmesh DM2 technology in the STB35N65DM2?

    The MDmesh DM2 technology ensures very low recovery charge and time, which is crucial for high-efficiency and high-switching-frequency applications.

  9. Can the STB35N65DM2 be used in automotive applications?

    While the STB35N65DM2 itself is not specifically listed as automotive-grade, similar models from STMicroelectronics are available with automotive-grade specifications.

  10. How does the STB35N65DM2 compare to other MOSFETs in terms of efficiency?

    The STB35N65DM2 offers high efficiency due to its low RDS(on) and fast recovery characteristics, making it competitive in high-efficiency applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):210W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB35N65DM2 STB35N60DM2
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc) 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14A, 10V 110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 54 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 100 V 2400 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 210W (Tc) 210W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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