STB30NF20
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STMicroelectronics STB30NF20

Manufacturer No:
STB30NF20
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 30A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB30NF20 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the unique STripFET process. This device is optimized for minimal input capacitance and gate charge, making it highly suitable for advanced high-efficiency isolated DC-DC converters and other switching applications. Available in the D²PAK package, it offers excellent thermal and electrical characteristics, ensuring reliable operation in a variety of power management scenarios.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)200V
Gate-Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25°C30A
Continuous Drain Current (ID) at TC = 100°C19A
Pulsed Drain Current (IDM)120A
Total Dissipation at TC = 25°C125W
Thermal Resistance Junction-Case (RthJC)1°C/W
Thermal Resistance Junction-Ambient (RthJA)62.5°C/W
Static Drain-Source On Resistance (RDS(on))0.075
Gate Threshold Voltage (VGS(th))2-4V
Total Gate Charge (Qg)38nC

Key Features

  • Minimized gate charge and input capacitance through STripFET process.
  • 100% avalanche tested for reliability.
  • Excellent figure of merit (RDS*Qg) for high efficiency.
  • Very good manufacturing repeatability.
  • Very low intrinsic capacitances.
  • Low on-resistance and fast switching times.
  • ECOPACK® packages with Lead-free second level interconnect.

Applications

The STB30NF20 is particularly suited for advanced high-efficiency isolated DC-DC converters, as well as other switching applications such as power supplies, motor control, and power management in various electronic systems.

Q & A

  1. What is the maximum drain-source voltage of the STB30NF20? The maximum drain-source voltage (VDS) is 200 V.
  2. What is the continuous drain current at 25°C? The continuous drain current at 25°C is 30 A.
  3. What is the thermal resistance junction-case (RthJC) for the D²PAK package? The thermal resistance junction-case (RthJC) is 1 °C/W.
  4. What is the typical static drain-source on resistance (RDS(on))? The typical static drain-source on resistance (RDS(on)) is 0.075 Ω.
  5. What is the gate threshold voltage range? The gate threshold voltage (VGS(th)) range is 2-4 V.
  6. Is the STB30NF20 100% avalanche tested? Yes, the STB30NF20 is 100% avalanche tested.
  7. What are the typical applications of the STB30NF20? The STB30NF20 is typically used in advanced high-efficiency isolated DC-DC converters and other switching applications.
  8. What package types are available for the STB30NF20? The STB30NF20 is available in the D²PAK package.
  9. Does the STB30NF20 come in ECOPACK® packages? Yes, the STB30NF20 is offered in ECOPACK® packages with Lead-free second level interconnect.
  10. What is the maximum lead temperature for soldering? The maximum lead temperature for soldering is 300 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1597 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STB30NF20
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MOSFET N-CH 200V 30A D2PAK
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Similar Products

Part Number STB30NF20 STB30NF20L STB40NF20
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 30A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 15A, 10V 75mOhm @ 15A, 5V 45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 3V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 65 nC @ 10 V 75 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1597 pF @ 25 V 1990 pF @ 25 V 2500 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 125W (Tc) 150W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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