STB30NF20L
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STMicroelectronics STB30NF20L

Manufacturer No:
STB30NF20L
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N CH 200V 30A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB30NF20L is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the STripFET series, which is renowned for its advanced technology designed to minimize input capacitance and gate charge. The STB30NF20L is packaged in a TO-263 (D2PAK) surface mount package, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)200V
Drain Current (ID)30A
On-Resistance (RDS(on))0.066Ω
Gate-Source Voltage (VGS)±20V
Maximum Power Dissipation (PTOT)125W
Package TypeTO-263 (D2PAK)
Mounting TypeSurface Mount
Junction Temperature (Tj)175°C
Avalanche Energy (EAS)140mJ

Key Features

  • Low On-Resistance: The STB30NF20L features a low on-resistance of 0.066 Ω, which minimizes power losses and enhances efficiency in high-power applications.
  • Minimized Gate Charge: Designed with STMicroelectronics' unique STripFET process, this MOSFET has minimized input capacitance and gate charge, making it ideal for high-frequency switching applications.
  • Excellent Figure of Merit (RDS*Qg): The device offers an excellent figure of merit, which is crucial for achieving high efficiency in power conversion systems.
  • 100% Avalanche Tested: Ensuring robustness and reliability, the STB30NF20L is 100% avalanche tested.
  • Low Intrinsic Capacitances: The MOSFET has very low intrinsic capacitances, which are beneficial for reducing switching losses and improving overall system performance.

Applications

The STB30NF20L is suitable for a wide range of high-power applications, including:

  • Advanced High-Efficiency Isolated DC-DC Converters: Its low on-resistance and minimized gate charge make it an excellent choice for primary switches in these converters.
  • Switching Applications: The MOSFET is well-suited for various switching applications due to its fast switching times and low losses.
  • Automotive Systems: With its AEC-Q101 qualification, the STB30NF20L is also suitable for use in automotive systems that require high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STB30NF20L?
    The maximum drain-source voltage (VDS) is 200 V.
  2. What is the continuous drain current rating of the STB30NF20L?
    The continuous drain current (ID) is 30 A at a case temperature (TC) of 25°C.
  3. What is the on-resistance (RDS(on)) of the STB30NF20L?
    The on-resistance (RDS(on)) is 0.066 Ω.
  4. What package type is the STB30NF20L available in?
    The STB30NF20L is available in a TO-263 (D2PAK) surface mount package.
  5. What is the maximum junction temperature (Tj) of the STB30NF20L?
    The maximum junction temperature (Tj) is 175°C.
  6. Is the STB30NF20L 100% avalanche tested?
    Yes, the STB30NF20L is 100% avalanche tested.
  7. What are the key features of the STB30NF20L that make it suitable for high-frequency switching applications?
    The key features include minimized input capacitance, low gate charge, and an excellent figure of merit (RDS*Qg).
  8. What are some common applications of the STB30NF20L?
    Common applications include advanced high-efficiency isolated DC-DC converters, switching applications, and automotive systems.
  9. Is the STB30NF20L AEC-Q101 qualified?
    Yes, the STB30NF20L is AEC-Q101 qualified, making it suitable for automotive applications.
  10. What is the maximum power dissipation (PTOT) of the STB30NF20L?
    The maximum power dissipation (PTOT) is 125 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:75mOhm @ 15A, 5V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1990 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB30NF20L STB30NF20
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 15A, 5V 75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 25 V 1597 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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