STB40NF20
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STMicroelectronics STB40NF20

Manufacturer No:
STB40NF20
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 40A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB40NF20 is a high-performance Power MOSFET developed by STMicroelectronics. This device is part of the STripFET series, which is designed to minimize input capacitance and gate charge. This unique design makes the STB40NF20 particularly suitable for applications requiring high efficiency and low power losses.

Key Specifications

ParameterValue
Maximum Drain Current40 A
VDS (Drain-Source Voltage)200 V
VGS (Gate-Source Voltage)±20 V
RDS(on) (On-State Resistance)55 mΩ (typical at VGS = 10 V)
Package TypesD2PAK, TO-220, TO-220FP, TO-247
Gate Charge65 nC (typical at VGS = 10 V)

Key Features

  • Low input capacitance and gate charge due to STMicroelectronics' unique STripFET process.
  • High efficiency and low power losses, making it ideal for advanced high-efficiency isolated DC-DC converters.
  • Available in multiple package types: D2PAK, TO-220, TO-220FP, and TO-247.
  • Suitable as a primary switch in high-performance applications.

Applications

  • Advanced high-efficiency isolated DC-DC converters.
  • High-power switching applications.
  • Power supplies and power management systems.
  • Automotive and industrial power systems.

Q & A

  1. What is the maximum drain current of the STB40NF20? The maximum drain current is 40 A.
  2. What are the package types available for the STB40NF20? The STB40NF20 is available in D2PAK, TO-220, TO-220FP, and TO-247 packages.
  3. What is the typical on-state resistance of the STB40NF20? The typical on-state resistance is 55 mΩ at VGS = 10 V.
  4. Why is the STB40NF20 suitable for high-efficiency applications? It is designed to minimize input capacitance and gate charge, reducing power losses and increasing efficiency.
  5. What is the maximum drain-source voltage of the STB40NF20? The maximum drain-source voltage is 200 V.
  6. What is the gate charge of the STB40NF20? The typical gate charge is 65 nC at VGS = 10 V.
  7. In which applications is the STB40NF20 commonly used? It is commonly used in advanced high-efficiency isolated DC-DC converters, high-power switching applications, power supplies, and automotive and industrial power systems.
  8. What process is used to manufacture the STB40NF20? The STB40NF20 is manufactured using STMicroelectronics' unique STripFET process.
  9. What are the benefits of using the STripFET process in the STB40NF20? The STripFET process minimizes input capacitance and gate charge, leading to higher efficiency and lower power losses.
  10. Where can I find detailed specifications for the STB40NF20? Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STF40NF20
STF40NF20
MOSFET N-CH 200V 40A TO220FP
STP40NF20
STP40NF20
MOSFET N-CH 200V 40A TO220AB
STW40NF20
STW40NF20
MOSFET N-CH 200V 40A TO247-3

Similar Products

Part Number STB40NF20 STB30NF20 STB40N20
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 30A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 20A, 10V 75mOhm @ 15A, 10V 45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V 38 nC @ 10 V 75 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V 1597 pF @ 25 V 2500 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 160W (Tc) 125W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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