STW40NF20
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STMicroelectronics STW40NF20

Manufacturer No:
STW40NF20
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 200V 40A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW40NF20 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the STripFET™ series, which is designed to minimize input capacitance and gate charge, making it highly suitable for advanced high-efficiency isolated DC-DC converters. The STW40NF20 is available in the TO-247 package and is known for its excellent figure of merit (RDS*Qg) and very low intrinsic capacitances.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 200 V
Gate-Source Voltage (VGS) ±20 V
Drain Current (continuous) at TC = 25°C (ID) 40 A
Drain Current (continuous) at TC = 100°C (ID) 25 A
Pulsed Drain Current (IDM) 160 A
Total Dissipation at TC = 25°C (Ptot) 160 W
Static Drain-Source On Resistance (RDS(on)) <0.045 Ω
Gate Threshold Voltage (VGS(th)) 2-4 V
Source-Drain Diode Forward Voltage (VSD) 1.5 V

Key Features

  • Minimized gate charge and very low intrinsic capacitances.
  • Excellent figure of merit (RDS*Qg).
  • Very good manufacturing repeatability.
  • 100% avalanche tested.
  • Available in ECOPACK® packages with Lead-free second level interconnect.

Applications

The STW40NF20 is primarily used in switching applications, particularly in advanced high-efficiency isolated DC-DC converters. Its low gate charge and excellent figure of merit make it an ideal choice for high-performance power switching.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW40NF20?

    The maximum drain-source voltage (VDS) is 200V.

  2. What is the continuous drain current (ID) at 25°C?

    The continuous drain current (ID) at 25°C is 40A.

  3. What is the static drain-source on resistance (RDS(on))?

    The static drain-source on resistance (RDS(on)) is less than 0.045Ω.

  4. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is 2-4V.

  5. Is the STW40NF20 100% avalanche tested?
  6. What type of package is the STW40NF20 available in?

    The STW40NF20 is available in the TO-247 package.

  7. What is the maximum pulsed drain current (IDM)?

    The maximum pulsed drain current (IDM) is 160A.

  8. What is the total dissipation at TC = 25°C (Ptot)?

    The total dissipation at TC = 25°C (Ptot) is 160W.

  9. Does the STW40NF20 come in ECOPACK® packages?
  10. What are the typical applications of the STW40NF20?

    The STW40NF20 is typically used in switching applications, especially in advanced high-efficiency isolated DC-DC converters.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STF40NF20
STF40NF20
MOSFET N-CH 200V 40A TO220FP
STP40NF20
STP40NF20
MOSFET N-CH 200V 40A TO220AB
STW40NF20
STW40NF20
MOSFET N-CH 200V 40A TO247-3

Similar Products

Part Number STW40NF20 STW90NF20 STW30NF20 STW40N20
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 83A (Tc) 30A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 20A, 10V 23mOhm @ 45A, 10V 75mOhm @ 15A, 10V 45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V 164 nC @ 10 V 38 nC @ 10 V 75 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V 5736 pF @ 25 V 1597 pF @ 25 V 2500 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 160W (Tc) 300W (Tc) 125W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -50°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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