Overview
The SCTWA35N65G2VAG is a silicon carbide (SiC) Power MOSFET developed by STMicroelectronics using their advanced and innovative 2nd generation SiC MOSFET technology. This device is characterized by its remarkably low on-resistance per unit area and excellent switching performance. The SCTWA35N65G2VAG is designed to operate in high-temperature environments, with a maximum operating junction temperature of 200 °C, and features a very fast and robust intrinsic body diode. It is packaged in an HiP247 long leads package, making it suitable for various high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 650 | V |
| Gate-source voltage (VGS) | -10 to 22 | V |
| Continuous drain current (ID) at TC = 25 °C | 45 | A |
| Continuous drain current (ID) at TC = 100 °C | 35 | A |
| Pulsed drain current (IDM) | 90 | A |
| Total power dissipation at TC = 25 °C (PTOT) | 240 | W |
| Thermal resistance, junction-to-case (RthJC) | 0.72 | °C/W |
| Thermal resistance, junction-to-ambient (RthJA) | 40 | °C/W |
| On-resistance (RDS(on)) | 55 mΩ (typ.) | mΩ |
| Gate threshold voltage (VGS(th)) | - | V |
| Forward on voltage (VSD) | 3.3 V (typ.) | V |
| Reverse recovery time (trr) | 18 ns (typ.) | ns |
Key Features
- Very fast and robust intrinsic body diode.
- Extremely low gate charge and input capacitance.
- Very high operating junction temperature capability (TJ = 200 °C).
- Tight variation of on-resistance vs. temperature.
- Low capacitance.
- Excellent switching performance with switching losses almost independent of junction temperature.
Applications
- Switching mode power supply.
- DC-DC converters.
- Industrial motor control.
- EV chargers.
Q & A
- What is the maximum drain-source voltage (VDS) of the SCTWA35N65G2VAG?
The maximum drain-source voltage (VDS) is 650 V.
- What is the continuous drain current (ID) at TC = 25 °C?
The continuous drain current (ID) at TC = 25 °C is 45 A).
- What is the thermal resistance, junction-to-case (RthJC) of the device?
The thermal resistance, junction-to-case (RthJC) is 0.72 °C/W).
- What are the key applications of the SCTWA35N65G2VAG?
The key applications include switching mode power supply, DC-DC converters, industrial motor control, and EV chargers).
- What is the maximum operating junction temperature (TJ) of the device?
The maximum operating junction temperature (TJ) is 200 °C).
- What is the typical on-resistance (RDS(on)) of the SCTWA35N65G2VAG?
The typical on-resistance (RDS(on)) is 55 mΩ).
- Does the device have a robust intrinsic body diode?
Yes, the device features a very fast and robust intrinsic body diode).
- What is the reverse recovery time (trr) of the device?
The reverse recovery time (trr) is typically 18 ns).
- Is the device suitable for high-temperature environments?
Yes, the device is designed to operate in high-temperature environments up to 200 °C).
- What package type is the SCTWA35N65G2VAG available in?
The device is packaged in an HiP247 long leads package).
