Overview
The SCTW35N65G2VAG is a high-performance silicon carbide (SiC) Power MOSFET developed by STMicroelectronics. This device leverages ST's advanced 2nd generation SiC MOSFET technology, offering remarkably low on-resistance per unit area and excellent switching performance. It is designed to meet the stringent requirements of modern power electronics, particularly in automotive and industrial applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Voltage Rating (Vds) | 650 | V |
| Continuous Drain Current (Id) | 45 | A |
| On-Resistance (Rds(on)) | 55 | mΩ |
| Package | HiP247 | |
| Channel Type | N-Channel | |
| Power Dissipation | 240 | W |
| AEC-Q101 Qualification | Yes |
Key Features
- Low on-resistance per unit area, enhancing efficiency and reducing power losses.
- Very fast and robust intrinsic body diode, ensuring reliable operation under various conditions.
- Low capacitance, which improves switching performance and reduces switching losses.
- AEC-Q101 qualified, making it suitable for automotive applications.
- Advanced 2nd generation SiC MOSFET technology for superior performance.
Applications
- Switching mode power supplies.
- Electric vehicle (EV) chargers.
- Automotive power electronics, such as traction inverters and on-board chargers.
- Industrial power conversion systems, including DC-DC converters and motor drives.
Q & A
- What is the voltage rating of the SCTW35N65G2VAG?
The voltage rating (Vds) of the SCTW35N65G2VAG is 650 V.
- What is the continuous drain current of the SCTW35N65G2VAG?
The continuous drain current (Id) of the SCTW35N65G2VAG is 45 A.
- What is the on-resistance of the SCTW35N65G2VAG?
The on-resistance (Rds(on)) of the SCTW35N65G2VAG is typically 55 mΩ.
- In which package is the SCTW35N65G2VAG available?
The SCTW35N65G2VAG is available in the HiP247 package.
- Is the SCTW35N65G2VAG AEC-Q101 qualified?
Yes, the SCTW35N65G2VAG is AEC-Q101 qualified, making it suitable for automotive applications.
- What are some key applications of the SCTW35N65G2VAG?
The SCTW35N65G2VAG is used in switching mode power supplies, EV chargers, automotive power electronics, and industrial power conversion systems.
- What technology is used in the SCTW35N65G2VAG?
The SCTW35N65G2VAG uses STMicroelectronics' advanced 2nd generation SiC MOSFET technology.
- What are the benefits of low on-resistance in the SCTW35N65G2VAG?
The low on-resistance enhances efficiency and reduces power losses, making the device more efficient in power conversion applications.
- Why is the intrinsic body diode important in the SCTW35N65G2VAG?
The robust intrinsic body diode ensures reliable operation under various conditions, particularly during switching cycles.
- How does low capacitance benefit the SCTW35N65G2VAG?
Low capacitance improves switching performance and reduces switching losses, leading to more efficient operation.
