SCTW90N65G2V
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STMicroelectronics SCTW90N65G2V

Manufacturer No:
SCTW90N65G2V
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
SICFET N-CH 650V 90A HIP247
Delivery:
Payment:
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Product Introduction

Overview

The SCTW90N65G2V is a silicon carbide (SiC) Power MOSFET developed by STMicroelectronics, utilizing their advanced 2nd generation SiC MOSFET technology. This device is designed to offer high performance and efficiency in power electronic systems. With its high voltage and current ratings, it is suitable for a variety of demanding applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
Current Rating (Id)119 A
On-Resistance (Rds(on))18 mΩ (typ., TJ = 25°C)
Operating Junction Temperature (TJ)200 °C
Package TypeTO-247

Key Features

  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Excellent switching performance compared to IGBTs
  • Low Rds(on), low capacitances, and high switching operations
  • Improves application performance in frequency, energy efficiency, system size, and weight reduction

Applications

The SCTW90N65G2V is ideal for various high-power applications, including but not limited to:

  • Power supplies and converters
  • Motor drives and control systems
  • Renewable energy systems (e.g., solar and wind power)
  • Electric vehicles and charging infrastructure
  • Industrial power systems and automation

Q & A

  1. What is the voltage rating of the SCTW90N65G2V? The voltage rating is 650 V.
  2. What is the current rating of the SCTW90N65G2V? The current rating is 119 A.
  3. What is the typical on-resistance of the SCTW90N65G2V at 25°C? The typical on-resistance is 18 mΩ.
  4. What is the maximum operating junction temperature of the SCTW90N65G2V? The maximum operating junction temperature is 200 °C.
  5. In what package is the SCTW90N65G2V available? The SCTW90N65G2V is available in the TO-247 package.
  6. How does the SCTW90N65G2V compare to IGBTs in terms of switching performance? The SCTW90N65G2V features excellent switching performance compared to IGBTs, simplifying thermal design and improving system efficiency.
  7. What are some key benefits of using the SCTW90N65G2V in power electronic systems? Key benefits include improved frequency, energy efficiency, system size reduction, and weight reduction.
  8. Is the SCTW90N65G2V suitable for high-temperature applications? Yes, it is suitable for high-temperature applications due to its high operating junction temperature capability.
  9. What types of applications can the SCTW90N65G2V be used in? It can be used in power supplies, motor drives, renewable energy systems, electric vehicles, and industrial power systems.
  10. Where can I find detailed specifications and datasheets for the SCTW90N65G2V? Detailed specifications and datasheets can be found on the STMicroelectronics official website, as well as on distributor websites like Mouser, Digi-Key, and Farnell.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:25mOhm @ 50A, 18V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:157 nC @ 18 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:3300 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):390W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
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