Overview
The FDC655BN is an N-Channel Logic Level MOSFET produced by onsemi (formerly Fairchild Semiconductor) using their advanced POWERTRENCH process. This device is designed to minimize on-state resistance while maintaining superior switching performance, making it ideal for low voltage and battery-powered applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | 30 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) | 6.3 | A |
| Pulsed Drain Current | - | - |
| Power Dissipation (PD) | 1.6 | W |
| Operating and Storage Junction Temperature Range | -55 to +150 | °C |
| Static Drain to Source On Resistance (RDS(ON)) at VGS = 10 V, ID = 6.3 A | 25 | mΩ |
| Static Drain to Source On Resistance (RDS(ON)) at VGS = 4.5 V, ID = 5.5 A | 33 | mΩ |
| Gate to Source Threshold Voltage (VGS(th)) | 1 to 3 | V |
| Input Capacitance (Ciss) | 470 to 620 | pF |
| Output Capacitance (Coss) | 100 to 130 | pF |
| Reverse Transfer Capacitance (Crss) | 60 to 90 | pF |
Key Features
- High Performance Trench Technology for Extremely Low RDS(ON)
- Fast Switching and Low Gate Charge
- Pb-Free, Halide Free, and RoHS Compliant
- Low In-Line Power Loss
- TSOT23-6 (SUPERSOT-6) Package
Applications
The FDC655BN is well-suited for low voltage and battery-powered applications, including but not limited to:
- Portable Electronics
- Power Management Systems
- DC-DC Converters
- Motor Control Circuits
- Switching Power Supplies
Q & A
- What is the maximum drain to source voltage (VDS) of the FDC655BN?
The maximum drain to source voltage (VDS) is 30 V. - What is the continuous drain current (ID) rating of the FDC655BN at 25°C?
The continuous drain current (ID) rating is 6.3 A. - What is the typical on-state resistance (RDS(ON)) at VGS = 10 V and ID = 6.3 A?
The typical on-state resistance (RDS(ON)) is 25 mΩ. - Is the FDC655BN RoHS compliant?
Yes, the FDC655BN is Pb-Free, Halide Free, and RoHS compliant. - What package type is the FDC655BN available in?
The FDC655BN is available in the TSOT23-6 (SUPERSOT-6) package. - What are some typical applications for the FDC655BN?
Typical applications include portable electronics, power management systems, DC-DC converters, motor control circuits, and switching power supplies. - What is the gate to source threshold voltage (VGS(th)) range?
The gate to source threshold voltage (VGS(th)) range is from 1 to 3 V. - What is the maximum power dissipation (PD) of the FDC655BN?
The maximum power dissipation (PD) is 1.6 W. - What is the operating and storage junction temperature range for the FDC655BN?
The operating and storage junction temperature range is -55 to +150°C. - Does the FDC655BN have fast switching capabilities?
Yes, the FDC655BN is known for its fast switching performance.
