Overview
The BSS123_R1_00001 is a single N-Channel MOSFET produced by Panjit International Inc. This component is packaged in a SOT-23-3 case and is designed for various electronic applications requiring low to medium voltage and current handling. It is part of Panjit's extensive range of MOSFETs, which are known for their reliability and performance in different circuit structures.
Key Specifications
| Parameter | Value | Details |
|---|---|---|
| Technology | Si | Silicon |
| Package / Case | SOT-23-3 | SMD/SMT |
| Number of Channels | 1 Channel | |
| Transistor Polarity | N-Channel | |
| Vds - Drain-Source Breakdown Voltage | 100 V | |
| Id - Continuous Drain Current | 170 mA | |
| Rds On - Drain-Source Resistance | 10 Ohms | |
| Vgs - Gate-Source Voltage | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | |
| Qg - Gate Charge | 1.8 nC | |
| Minimum Operating Temperature | -55 C | |
| Maximum Operating Temperature | +150 C | |
| Pd - Power Dissipation | 500 mW | |
| Channel Mode | Enhancement | |
| Rise Time | 19 ns | |
| Fall Time | 20 ns | |
| Typical Turn-Off Delay Time | 8.2 ns | |
| Typical Turn-On Delay Time | 3.4 ns | |
| Unit Weight | 0.000282 oz |
Key Features
- N-Channel MOSFET: The BSS123_R1_00001 operates as an N-Channel enhancement mode MOSFET, suitable for a wide range of switching and amplification applications.
- Low On-Resistance: With a drain-source on-resistance (Rds On) of 10 Ohms, this MOSFET minimizes power losses and enhances efficiency in circuits.
- High Voltage Handling: It can handle a drain-source breakdown voltage of 100 V, making it robust for various power management and control applications.
- Compact Packaging: The SOT-23-3 package is compact and suitable for surface mount technology (SMT), allowing for dense and efficient board designs.
- Fast Switching Times: The MOSFET features fast rise and fall times (19 ns and 20 ns respectively), and short turn-on and turn-off delay times, making it ideal for high-frequency applications.
Applications
The BSS123_R1_00001 is versatile and can be used in a variety of applications, including:
- Power Management: Suitable for power switching, voltage regulation, and power amplification in electronic devices.
- Motor Control: Can be used in motor control circuits for home appliances, water pumps, and other brushless DC motors.
- Signal Switching: Ideal for signal switching and amplification in communication and audio equipment.
- Protection Circuits: Can be used in overvoltage protection, overcurrent protection, and other protection circuits.
Q & A
- What is the package type of the BSS123_R1_00001 MOSFET? The BSS123_R1_00001 is packaged in a SOT-23-3 case.
- What is the maximum drain-source breakdown voltage of the BSS123_R1_00001? The maximum drain-source breakdown voltage is 100 V.
- What is the continuous drain current rating of the BSS123_R1_00001? The continuous drain current rating is 170 mA.
- What is the typical rise time of the BSS123_R1_00001? The typical rise time is 19 ns.
- What is the typical fall time of the BSS123_R1_00001? The typical fall time is 20 ns.
- What is the operating temperature range of the BSS123_R1_00001? The operating temperature range is from -55°C to +150°C.
- What is the power dissipation of the BSS123_R1_00001? The power dissipation is 500 mW.
- Is the BSS123_R1_00001 RoHS compliant? Yes, the BSS123_R1_00001 is RoHS compliant.
- What are some common applications of the BSS123_R1_00001? Common applications include power management, motor control, signal switching, and protection circuits.
- Where can I find the datasheet for the BSS123_R1_00001? The datasheet can be found on the official Panjit website or through distributors like Mouser and Xecor.
