BC846BPN-AU_R1_000A1
  • Share:

Panjit International Inc. BC846BPN-AU_R1_000A1

Manufacturer No:
BC846BPN-AU_R1_000A1
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
SOT-363, TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC846BPN-AU_R1_000A1, produced by Panjit International Inc., is a bipolar junction transistor (BJT) array that includes one NPN and one PNP transistor in a single package. This component is designed for general-purpose switching and amplification applications. It is housed in a small SOT363 (SC-88) surface-mount device (SMD) plastic package, making it ideal for space-constrained designs. The transistor pair offers closely matched current gain, low collector capacitance, and low collector-emitter saturation voltage, which are crucial for efficient and reliable operation in various electronic circuits.

Key Specifications

Parameter Value
Type NPN/PNP Complementary
Package SOT363 (SC-88), TSSOP6
Collector-Emitter Voltage (VCEO) 65 V
Collector Current (IC) 100 mA
DC Current Gain (hFE) 200 - 450
Collector-Emitter Saturation Voltage (VCE(sat)) Low
Collector Capacitance Low
Maximum Junction Temperature (TJ) 150°C
Operating Temperature Range -40°C to +125°C
Transition Frequency (fT) 100 MHz
Power Dissipation (Ptot) 225 mW

Key Features

  • Low Collector Capacitance and Collector-Emitter Saturation Voltage: These characteristics enhance the transistor's switching and amplification performance.
  • Closely Matched Current Gain: Ensures consistent performance between the NPN and PNP transistors.
  • Small Package Size: The SOT363 package reduces the number of components and board space, making it suitable for compact designs.
  • No Mutual Interference: The design minimizes interference between the transistors, improving overall system reliability.
  • General-Purpose Switching and Amplification: Versatile for a wide range of applications requiring switching and amplification functions.

Applications

The BC846BPN-AU_R1_000A1 is suitable for various applications across different industries, including:

  • Automotive Systems: Although not automotive qualified, similar models can be used in automotive applications with proper validation.
  • Industrial Control Systems: For general-purpose switching and amplification in industrial control circuits.
  • Consumer Electronics: In audio amplifiers, power supplies, and other consumer electronic devices.
  • Mobile and Wearable Devices: Due to its small package size and low power consumption, it is suitable for mobile and wearable electronics.

Q & A

  1. What is the package type of the BC846BPN-AU_R1_000A1?

    The BC846BPN-AU_R1_000A1 is packaged in a SOT363 (SC-88) surface-mount device (SMD) plastic package.

  2. What are the collector-emitter voltage and current ratings of this transistor?

    The collector-emitter voltage (VCEO) is 65 V, and the collector current (IC) is 100 mA.

  3. What is the DC current gain (hFE) range of this transistor?

    The DC current gain (hFE) ranges from 200 to 450.

  4. What is the maximum junction temperature for this transistor?

    The maximum junction temperature (TJ) is 150°C.

  5. Is this transistor automotive qualified?

    No, the BC846BPN-AU_R1_000A1 is not automotive qualified.

  6. What is the operating temperature range of this transistor?

    The operating temperature range is -40°C to +125°C.

  7. What is the transition frequency (fT) of this transistor?

    The transition frequency (fT) is 100 MHz.

  8. What are the key features of the BC846BPN-AU_R1_000A1?

    Key features include low collector capacitance, low collector-emitter saturation voltage, closely matched current gain, and a small package size.

  9. What types of applications is this transistor suitable for?

    This transistor is suitable for general-purpose switching and amplification in various applications, including automotive, industrial, consumer electronics, and mobile devices.

  10. How does the small package size benefit the design?

    The small package size reduces the number of components and board space, making it ideal for compact designs.

Product Attributes

Transistor Type:NPN, PNP Complementary
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):65V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA, 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V / 220 @ 2mA, 5V
Power - Max:225mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.35
971

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44M32S50V50
DD44M32S50V50
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
NST847BPDP6T5G
NST847BPDP6T5G
onsemi
TRANS NPN/PNP 45V 0.1A SOT963
BC847SH6327XTSA1
BC847SH6327XTSA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363-6
BCM847DS,115
BCM847DS,115
Nexperia USA Inc.
TRANS 2NPN 45V 0.1A 6TSOP
NST3906DXV6T1G
NST3906DXV6T1G
onsemi
TRANS 2PNP 40V 0.2A SOT563
BC847BSHE3-TP
BC847BSHE3-TP
Micro Commercial Co
DUAL NPN SMALL SIGNAL TRANSISTOR
PBSS4350SS,115
PBSS4350SS,115
Nexperia USA Inc.
TRANS 2NPN 50V 2.7A 8SO
ULN2004APG,C,N
ULN2004APG,C,N
Toshiba Semiconductor and Storage
IC PWR RELAY 7NPN 1:1 16DIP
BC846SE6433BTMA1
BC846SE6433BTMA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC857BDW1T1
BC857BDW1T1
onsemi
TRANS PNP DUAL 45V 100MA SOT-363
BC856BS/DG/B4X
BC856BS/DG/B4X
Nexperia USA Inc.
TRANSISTOR GEN PURP
BC846BPNH-QX
BC846BPNH-QX
Nexperia USA Inc.
BC846BPNH-QX

Related Product By Brand

MBR10100DC_R2_00001
MBR10100DC_R2_00001
Panjit International Inc.
D PAK SURFACE MOUNT SCHOTTKY BAR
BAS20-AU_R1_000A1
BAS20-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
BZX84C10TW_R1_00001
BZX84C10TW_R1_00001
Panjit International Inc.
TRIPLE ISOLATED SURFACE MOUNT ZE
BZX84C14_R1_00001
BZX84C14_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PDZ20B_R1_00001
PDZ20B_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B5V6_R1_00001
BZX84B5V6_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84C22_R1_00001
BZX84C22_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84C3_R1_00001
BZX84C3_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B5V1W_R1_00001
BZX84B5V1W_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
1N5342B_R2_00001
1N5342B_R2_00001
Panjit International Inc.
SILICON ZENER DIODE
BCP53-16-AU_R2_000A1
BCP53-16-AU_R2_000A1
Panjit International Inc.
TRANS PNP 100V 1A SOT223
BC817-40_R1_00001
BC817-40_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.5A SOT323