BC846BPN-AU_R1_000A1
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Panjit International Inc. BC846BPN-AU_R1_000A1

Manufacturer No:
BC846BPN-AU_R1_000A1
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
SOT-363, TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC846BPN-AU_R1_000A1, produced by Panjit International Inc., is a bipolar junction transistor (BJT) array that includes one NPN and one PNP transistor in a single package. This component is designed for general-purpose switching and amplification applications. It is housed in a small SOT363 (SC-88) surface-mount device (SMD) plastic package, making it ideal for space-constrained designs. The transistor pair offers closely matched current gain, low collector capacitance, and low collector-emitter saturation voltage, which are crucial for efficient and reliable operation in various electronic circuits.

Key Specifications

Parameter Value
Type NPN/PNP Complementary
Package SOT363 (SC-88), TSSOP6
Collector-Emitter Voltage (VCEO) 65 V
Collector Current (IC) 100 mA
DC Current Gain (hFE) 200 - 450
Collector-Emitter Saturation Voltage (VCE(sat)) Low
Collector Capacitance Low
Maximum Junction Temperature (TJ) 150°C
Operating Temperature Range -40°C to +125°C
Transition Frequency (fT) 100 MHz
Power Dissipation (Ptot) 225 mW

Key Features

  • Low Collector Capacitance and Collector-Emitter Saturation Voltage: These characteristics enhance the transistor's switching and amplification performance.
  • Closely Matched Current Gain: Ensures consistent performance between the NPN and PNP transistors.
  • Small Package Size: The SOT363 package reduces the number of components and board space, making it suitable for compact designs.
  • No Mutual Interference: The design minimizes interference between the transistors, improving overall system reliability.
  • General-Purpose Switching and Amplification: Versatile for a wide range of applications requiring switching and amplification functions.

Applications

The BC846BPN-AU_R1_000A1 is suitable for various applications across different industries, including:

  • Automotive Systems: Although not automotive qualified, similar models can be used in automotive applications with proper validation.
  • Industrial Control Systems: For general-purpose switching and amplification in industrial control circuits.
  • Consumer Electronics: In audio amplifiers, power supplies, and other consumer electronic devices.
  • Mobile and Wearable Devices: Due to its small package size and low power consumption, it is suitable for mobile and wearable electronics.

Q & A

  1. What is the package type of the BC846BPN-AU_R1_000A1?

    The BC846BPN-AU_R1_000A1 is packaged in a SOT363 (SC-88) surface-mount device (SMD) plastic package.

  2. What are the collector-emitter voltage and current ratings of this transistor?

    The collector-emitter voltage (VCEO) is 65 V, and the collector current (IC) is 100 mA.

  3. What is the DC current gain (hFE) range of this transistor?

    The DC current gain (hFE) ranges from 200 to 450.

  4. What is the maximum junction temperature for this transistor?

    The maximum junction temperature (TJ) is 150°C.

  5. Is this transistor automotive qualified?

    No, the BC846BPN-AU_R1_000A1 is not automotive qualified.

  6. What is the operating temperature range of this transistor?

    The operating temperature range is -40°C to +125°C.

  7. What is the transition frequency (fT) of this transistor?

    The transition frequency (fT) is 100 MHz.

  8. What are the key features of the BC846BPN-AU_R1_000A1?

    Key features include low collector capacitance, low collector-emitter saturation voltage, closely matched current gain, and a small package size.

  9. What types of applications is this transistor suitable for?

    This transistor is suitable for general-purpose switching and amplification in various applications, including automotive, industrial, consumer electronics, and mobile devices.

  10. How does the small package size benefit the design?

    The small package size reduces the number of components and board space, making it ideal for compact designs.

Product Attributes

Transistor Type:NPN, PNP Complementary
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):65V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA, 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V / 220 @ 2mA, 5V
Power - Max:225mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
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