Overview
The 2N7002K-AU_R1_000A2 is an N-Channel Enhancement Mode MOSFET produced by Panjit International Inc. This component is designed for a wide range of applications requiring low on-resistance and high switching speeds. It features a compact SOT-23 package, making it ideal for space-constrained designs. The MOSFET is lead-free and halogen-free, complying with RoHS standards, and is suitable for use in various electronic circuits where reliability and performance are critical.
Key Specifications
| Parameter | Symbol | Test Conditions | Min. | Max. | Unit | |
|---|---|---|---|---|---|---|
| Static Drain-source Breakdown Voltage | VDS | VGS = 0 V, ID = 10 μA | 60 | - | - | V |
| Gate-threshold Voltage | VGS(th) | - | - | 2.1 | V | |
| Drain-source On-resistance | RDS(on) | VGS = 10 V, ID = 500 mA | - | - | 2 | Ω |
| Forward Transconductance | gfs | VDS = 10 V, ID = 200 mA | 100 | - | - | mS |
| Diode Forward Voltage | VSD | IS = 200 mA, VGS = 0 V | - | - | 1.3 | V |
| Total Gate Charge | Qg | VDS = 10 V, VGS = 4.5 V, ID ≈ 250 mA | - | 0.4 | 0.6 | nC |
| Input Capacitance | Ciss | VDS = 25 V, VGS = 0 V, f = 1 MHz | - | 30 | - | pF |
| Output Capacitance | Coss | - | - | 6 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 2.5 | - | pF |
| Turn-on Time | td(on) | VDD = 30 V, RL = 150 Ω, ID ≈ 200 mA, VGEN = 10 V, Rg = 10 Ω | - | - | 25 | ns |
| Turn-off Time | td(off) | - | - | 35 | ns |
Key Features
- Compact SOT-23 Package: Ideal for space-constrained designs.
- Low On-Resistance: RDS(on) of 2 Ω at VGS = 10 V and ID = 500 mA.
- High Switching Speeds: Fast turn-on and turn-off times of 25 ns and 35 ns respectively.
- ESD Protected: Enhanced protection against electrostatic discharge.
- RoHS Compliant: Lead-free and halogen-free, meeting environmental standards.
- Wide Operating Temperature Range: Junction and storage temperature range from -55°C to +150°C.
Applications
- Power Switching: Suitable for use in power switching circuits due to its low on-resistance and high switching speeds.
- Motor Control: Can be used in motor control applications requiring efficient and reliable switching.
- Audio Amplifiers: Applicable in audio amplifier circuits where low distortion and high fidelity are necessary.
- General Purpose Switching: Ideal for various general-purpose switching applications in electronic circuits.
Q & A
- What is the maximum drain-source breakdown voltage of the 2N7002K-AU_R1_000A2 MOSFET?
The maximum drain-source breakdown voltage is 60 V. - What is the typical on-resistance of the 2N7002K-AU_R1_000A2 at VGS = 10 V and ID = 500 mA?
The typical on-resistance is 2 Ω. - What is the gate-threshold voltage range for the 2N7002K-AU_R1_000A2?
The gate-threshold voltage range is up to 2.1 V. - Is the 2N7002K-AU_R1_000A2 RoHS compliant?
Yes, the 2N7002K-AU_R1_000A2 is lead-free and halogen-free, making it RoHS compliant. - What is the maximum junction temperature for the 2N7002K-AU_R1_000A2?
The maximum junction temperature is 150°C. - What is the typical turn-on time for the 2N7002K-AU_R1_000A2?
The typical turn-on time is 25 ns. - What is the typical turn-off time for the 2N7002K-AU_R1_000A2?
The typical turn-off time is 35 ns. - What package type does the 2N7002K-AU_R1_000A2 come in?
The 2N7002K-AU_R1_000A2 comes in a SOT-23 package. - What are some common applications for the 2N7002K-AU_R1_000A2?
Common applications include power switching, motor control, audio amplifiers, and general-purpose switching. - What is the forward transconductance of the 2N7002K-AU_R1_000A2 at VDS = 10 V and ID = 200 mA?
The forward transconductance is 100 mS.
