NVTFS5826NLWFTWG
  • Share:

onsemi NVTFS5826NLWFTWG

Manufacturer No:
NVTFS5826NLWFTWG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 7.6A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVTFS5826NLWFTWG is a single N-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a small footprint of 3.3 x 3.3 mm, making it ideal for compact designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and industrial environments. It is also Pb-free and RoHS compliant, aligning with environmental standards.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (Tmb = 25°C) ID 20 A
Continuous Drain Current (Tmb = 100°C) ID 14 A
Power Dissipation (Tmb = 25°C) PD 22 W
Power Dissipation (Tmb = 100°C) PD 11 W
Drain-to-Source On Resistance (VGS = 10 V, ID = 10 A) RDS(on) 19-24
Gate Threshold Voltage VGS(TH) 1.5-2.5 V
Operating Junction and Storage Temperature TJ, Tstg -55 to +175 °C
Lead Temperature for Soldering Purposes TL 260 °C

Key Features

  • Small Footprint: 3.3 x 3.3 mm WDFN8 package for compact design.
  • Low RDS(on): Minimizes conduction losses with on-resistance as low as 19-24 mΩ at VGS = 10 V.
  • Low Capacitance: Reduces driver losses with input capacitance of 850 pF.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability in automotive and industrial applications.
  • Pb-Free and RoHS Compliant: Aligns with environmental standards.
  • Wettable Flanks: Enhances inspection and quality control.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Power Systems: Used in high-power industrial applications requiring low on-resistance and high current handling.
  • Power Supplies: Ideal for switch-mode power supplies, DC-DC converters, and other power management systems.
  • Motor Control: Applied in motor control circuits for efficient and reliable operation.

Q & A

  1. What is the maximum drain-to-source voltage of the NVTFS5826NLWFTWG?

    The maximum drain-to-source voltage is 60 V.

  2. What is the continuous drain current at Tmb = 25°C?

    The continuous drain current at Tmb = 25°C is 20 A.

  3. What is the on-resistance of the MOSFET at VGS = 10 V and ID = 10 A?

    The on-resistance is between 19-24 mΩ.

  4. Is the NVTFS5826NLWFTWG Pb-free and RoHS compliant?

    Yes, it is Pb-free and RoHS compliant.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to +175 °C.

  6. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260 °C.

  7. What are the key features of the WDFN8 package?

    The WDFN8 package features a small footprint of 3.3 x 3.3 mm, low RDS(on), and low capacitance.

  8. Is the NVTFS5826NLWFTWG suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  9. What are some common applications of the NVTFS5826NLWFTWG?

    Common applications include automotive systems, industrial power systems, power supplies, and motor control circuits.

  10. What is the typical gate threshold voltage of the MOSFET?

    The typical gate threshold voltage is between 1.5-2.5 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:7.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 22W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

-
61

Please send RFQ , we will respond immediately.

Same Series
NVTFS5826NLWFTAG
NVTFS5826NLWFTAG
MOSFET N-CH 60V 7.6A 8WDFN
NVTFS5826NLTWG
NVTFS5826NLTWG
MOSFET N-CH 60V 20A 8WDFN
NVTFS5826NLTAG
NVTFS5826NLTAG
MOSFET N-CH 60V 20A 8WDFN

Similar Products

Part Number NVTFS5826NLWFTWG NVTFS5820NLWFTWG NVTFS5824NLWFTWG NVTFS5826NLWFTAG
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Last Time Buy Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Ta) 11A (Ta) 37A (Tc) 7.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 10A, 10V 11.5mOhm @ 8.7A, 10V 20.5mOhm @ 10A, 10V 24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.3V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 28 nC @ 10 V 16 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 25 V 1462 pF @ 25 V 850 pF @ 25 V 850 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 3.2W (Ta), 22W (Tc) 3.2W (Ta), 21W (Tc) 3.2W (Ta), 57W (Tc) 3.2W (Ta), 22W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5