NVTFS5826NLWFTWG
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onsemi NVTFS5826NLWFTWG

Manufacturer No:
NVTFS5826NLWFTWG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 7.6A 8WDFN
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The NVTFS5826NLWFTWG is a single N-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a small footprint of 3.3 x 3.3 mm, making it ideal for compact designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and industrial environments. It is also Pb-free and RoHS compliant, aligning with environmental standards.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (Tmb = 25°C) ID 20 A
Continuous Drain Current (Tmb = 100°C) ID 14 A
Power Dissipation (Tmb = 25°C) PD 22 W
Power Dissipation (Tmb = 100°C) PD 11 W
Drain-to-Source On Resistance (VGS = 10 V, ID = 10 A) RDS(on) 19-24
Gate Threshold Voltage VGS(TH) 1.5-2.5 V
Operating Junction and Storage Temperature TJ, Tstg -55 to +175 °C
Lead Temperature for Soldering Purposes TL 260 °C

Key Features

  • Small Footprint: 3.3 x 3.3 mm WDFN8 package for compact design.
  • Low RDS(on): Minimizes conduction losses with on-resistance as low as 19-24 mΩ at VGS = 10 V.
  • Low Capacitance: Reduces driver losses with input capacitance of 850 pF.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability in automotive and industrial applications.
  • Pb-Free and RoHS Compliant: Aligns with environmental standards.
  • Wettable Flanks: Enhances inspection and quality control.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Power Systems: Used in high-power industrial applications requiring low on-resistance and high current handling.
  • Power Supplies: Ideal for switch-mode power supplies, DC-DC converters, and other power management systems.
  • Motor Control: Applied in motor control circuits for efficient and reliable operation.

Q & A

  1. What is the maximum drain-to-source voltage of the NVTFS5826NLWFTWG?

    The maximum drain-to-source voltage is 60 V.

  2. What is the continuous drain current at Tmb = 25°C?

    The continuous drain current at Tmb = 25°C is 20 A.

  3. What is the on-resistance of the MOSFET at VGS = 10 V and ID = 10 A?

    The on-resistance is between 19-24 mΩ.

  4. Is the NVTFS5826NLWFTWG Pb-free and RoHS compliant?

    Yes, it is Pb-free and RoHS compliant.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to +175 °C.

  6. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260 °C.

  7. What are the key features of the WDFN8 package?

    The WDFN8 package features a small footprint of 3.3 x 3.3 mm, low RDS(on), and low capacitance.

  8. Is the NVTFS5826NLWFTWG suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  9. What are some common applications of the NVTFS5826NLWFTWG?

    Common applications include automotive systems, industrial power systems, power supplies, and motor control circuits.

  10. What is the typical gate threshold voltage of the MOSFET?

    The typical gate threshold voltage is between 1.5-2.5 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:7.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 22W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number NVTFS5826NLWFTWG NVTFS5820NLWFTWG NVTFS5824NLWFTWG NVTFS5826NLWFTAG
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Last Time Buy Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Ta) 11A (Ta) 37A (Tc) 7.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 10A, 10V 11.5mOhm @ 8.7A, 10V 20.5mOhm @ 10A, 10V 24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.3V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 28 nC @ 10 V 16 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 25 V 1462 pF @ 25 V 850 pF @ 25 V 850 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 3.2W (Ta), 22W (Tc) 3.2W (Ta), 21W (Tc) 3.2W (Ta), 57W (Tc) 3.2W (Ta), 22W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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