NVTFS5826NLTAG
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onsemi NVTFS5826NLTAG

Manufacturer No:
NVTFS5826NLTAG
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 60V 20A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVTFS5826NL, produced by onsemi, is a high-performance, single N-Channel power MOSFET designed for a wide range of applications requiring low on-resistance and high current handling. This device features a small footprint in a WDFN8 package, making it ideal for compact designs. It is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding environments. The MOSFET is Pb-free and RoHS compliant, aligning with modern environmental standards.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (Tmb = 25°C) ID 20 A
Continuous Drain Current (Tmb = 100°C) ID 14 A
Power Dissipation (Tmb = 25°C) PD 22 W
Power Dissipation (Tmb = 100°C) PD 11 W
Drain-to-Source On Resistance (VGS = 10 V, ID = 10 A) RDS(on) 19-24
Gate Threshold Voltage VGS(TH) 1.5-2.5 V
Operating Junction and Storage Temperature TJ, Tstg -55 to +175 °C
Lead Temperature for Soldering Purposes TL 260 °C

Key Features

  • Small Footprint: The NVTFS5826NL is packaged in a compact WDFN8 (3.3 x 3.3 mm) package, ideal for space-constrained designs.
  • Low On-Resistance: With an RDS(on) of 19-24 mΩ at VGS = 10 V and ID = 10 A, this MOSFET minimizes conduction losses.
  • Low Capacitance: Low input, output, and reverse transfer capacitances reduce driver losses and improve switching performance.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability in automotive and other demanding applications.
  • Pb-Free and RoHS Compliant: Aligns with modern environmental standards.
  • Wettable Flanks: The NVTFS5826NLWF variant features wettable flanks for improved solder joint inspection.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Power Management: Ideal for power management in DC-DC converters, motor control, and power supplies.
  • Industrial Control: Used in industrial control systems, robotics, and other high-reliability applications.
  • Consumer Electronics: Applicable in consumer electronics requiring high current handling and low on-resistance.

Q & A

  1. What is the maximum drain-to-source voltage of the NVTFS5826NL?

    The maximum drain-to-source voltage (VDSS) is 60 V.

  2. What is the continuous drain current rating at Tmb = 25°C?

    The continuous drain current (ID) at Tmb = 25°C is 20 A.

  3. What is the typical on-resistance of the NVTFS5826NL?

    The typical on-resistance (RDS(on)) is 19-24 mΩ at VGS = 10 V and ID = 10 A.

  4. Is the NVTFS5826NL Pb-free and RoHS compliant?

    Yes, the NVTFS5826NL is Pb-free and RoHS compliant.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to +175°C.

  6. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C.

  7. Is the NVTFS5826NL AEC-Q101 qualified?

    Yes, the NVTFS5826NL is AEC-Q101 qualified and PPAP capable.

  8. What package type is the NVTFS5826NL available in?

    The NVTFS5826NL is available in a WDFN8 (3.3 x 3.3 mm) package.

  9. What are some typical applications of the NVTFS5826NL?

    Typical applications include automotive systems, power management, industrial control, and consumer electronics.

  10. Does the NVTFS5826NL have wettable flanks?

    Yes, the NVTFS5826NLWF variant features wettable flanks for improved solder joint inspection.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Same Series
NVTFS5826NLWFTAG
NVTFS5826NLWFTAG
MOSFET N-CH 60V 7.6A 8WDFN
NVTFS5826NLTWG
NVTFS5826NLTWG
MOSFET N-CH 60V 20A 8WDFN
NVTFS5826NLTAG
NVTFS5826NLTAG
MOSFET N-CH 60V 20A 8WDFN

Similar Products

Part Number NVTFS5826NLTAG NVTFS5826NLTWG NVTFS5820NLTAG NVTFS5824NLTAG
Manufacturer onsemi onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Active
FET Type - - N-Channel N-Channel
Technology - - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - - 60 V 60 V
Current - Continuous Drain (Id) @ 25°C - - 11A (Ta) 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - - 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs - - 11.5mOhm @ 8.7A, 10V 20.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id - - 2.3V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 28 nC @ 10 V 16 nC @ 10 V
Vgs (Max) - - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - - 1462 pF @ 25 V 850 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) - - 3.2W (Ta), 21W (Tc) 3.2W (Ta), 57W (Tc)
Operating Temperature - - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type - - Surface Mount Surface Mount
Supplier Device Package - - 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case - - 8-PowerWDFN 8-PowerWDFN

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