NVTFS5820NLTAG
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onsemi NVTFS5820NLTAG

Manufacturer No:
NVTFS5820NLTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 11A 8WDFN
Delivery:
Payment:
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Product Introduction

Overview

The NVTFS5820NLTAG is a low/medium voltage N-channel MOSFET produced by onsemi. This device is designed to offer high performance and reliability in various automotive and industrial applications. It features an enhancement mode channel and is qualified to the AEC-Q100 standard, ensuring its suitability for demanding environments.

Key Specifications

ParameterValue
Maximum Operating Temperature+175°C
Power Dissipation (Pd)21 W
Channel ModeEnhancement
QualificationAEC-Q100

Key Features

  • Low on-resistance (Rds(on)) for efficient power handling
  • High current capability and low thermal resistance
  • AEC-Q100 qualified for automotive reliability
  • Enhancement mode N-channel MOSFET for precise control
  • Robust design for high performance in harsh environments

Applications

  • Automotive systems (e.g., power steering, fuel pumps, and anti-lock braking systems)
  • Industrial power supplies and motor control
  • Power management in consumer electronics
  • High-reliability applications requiring AEC-Q100 compliance

Q & A

  1. What is the maximum operating temperature of the NVTFS5820NLTAG MOSFET? The maximum operating temperature is +175°C.
  2. What is the power dissipation (Pd) of the NVTFS5820NLTAG? The power dissipation is 21 W.
  3. What type of channel mode does the NVTFS5820NLTAG use? It uses an enhancement mode channel.
  4. Is the NVTFS5820NLTAG qualified for automotive use? Yes, it is qualified to the AEC-Q100 standard.
  5. What are some typical applications for the NVTFS5820NLTAG? Typical applications include automotive systems, industrial power supplies, and high-reliability consumer electronics.
  6. What is the significance of AEC-Q100 qualification? AEC-Q100 qualification ensures the component meets stringent automotive reliability standards.
  7. How does the NVTFS5820NLTAG handle high current? It features low on-resistance and high current capability.
  8. Is the NVTFS5820NLTAG suitable for harsh environments? Yes, it is designed to operate in harsh environments with high reliability.
  9. Where can I find detailed specifications for the NVTFS5820NLTAG? Detailed specifications can be found in the datasheet available on onsemi’s official website and other authorized distributors like Mouser Electronics.
  10. Can I use the NVTFS5820NLTAG in non-automotive applications? Yes, it can be used in various industrial and consumer electronics applications requiring high performance and reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.5mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1462 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 21W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Same Series
NVTFS5820NLWFTAG
NVTFS5820NLWFTAG
MOSFET N-CH 60V 11A 8WDFN
NVTFS5820NLWFTWG
NVTFS5820NLWFTWG
MOSFET N-CH 60V 11A 8WDFN
NVTFS5820NLTWG
NVTFS5820NLTWG
MOSFET N-CH 60V 11A 8WDFN

Similar Products

Part Number NVTFS5820NLTAG NVTFS5824NLTAG NVTFS5820NLTWG NVTFS5826NLTAG
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V 60 V 60 V -
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 37A (Tc) 11A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 11.5mOhm @ 8.7A, 10V 20.5mOhm @ 10A, 10V 11.5mOhm @ 8.7A, 10V -
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.5V @ 250µA 2.3V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V 16 nC @ 10 V 28 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1462 pF @ 25 V 850 pF @ 25 V 1462 pF @ 25 V -
FET Feature - - - -
Power Dissipation (Max) 3.2W (Ta), 21W (Tc) 3.2W (Ta), 57W (Tc) 3.2W (Ta), 21W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount -
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) -
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN -

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