Overview
The NVTFS5820NLTWG is an automotive Power MOSFET designed by onsemi, optimized for compact and efficient designs. It features a 3x3mm flat lead package (WDFN-8/u8FL) which enhances thermal performance and allows for wettable flanks for improved optical inspection. This MOSFET is AEC-Q101 qualified and PPAP capable, making it suitable for various automotive applications. It is also Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (Tmb = 25°C) | ID | 29 | A |
| Continuous Drain Current (Tmb = 100°C) | ID | 20 | A |
| Power Dissipation (Tmb = 25°C) | PD | 21 | W |
| Power Dissipation (Tmb = 100°C) | PD | 10 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 247 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to 175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 8.7 A) | RDS(on) | 11.5 mΩ | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.5 - 2.3 V | V |
| Input Capacitance | Ciss | 1462 pF | pF |
| Output Capacitance | Coss | 150 pF | pF |
| Reverse Transfer Capacitance | Crss | 96 pF | pF |
Key Features
- Small Footprint (3.3x3.3 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- Wettable Flanks Option for Enhanced Optical Inspection
- AEC-Q101 Qualified and PPAP Capable
- Pb-free and RoHS Compliant
- High Current Handling Capability
- 100% Avalanche Energy Tested
Applications
- Automotive Motor Control
- Automotive Solenoid/Relay Driver
- Automotive Lamp Driver
- Automotive Engine Control Units
- Automotive Body Control Units
Q & A
- What is the maximum drain-to-source voltage of the NVTFS5820NLTWG?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current at Tmb = 25°C?
The continuous drain current at Tmb = 25°C is 29 A.
- What is the typical on-resistance of the MOSFET at VGS = 10 V?
The typical on-resistance (RDS(on)) at VGS = 10 V is 11.5 mΩ.
- Is the NVTFS5820NLTWG AEC-Q101 qualified?
Yes, the NVTFS5820NLTWG is AEC-Q101 qualified and PPAP capable.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55 to 175°C.
- What are the typical applications of the NVTFS5820NLTWG?
Typical applications include automotive motor control, solenoid/relay drivers, lamp drivers, engine control units, and body control units.
- Is the NVTFS5820NLTWG Pb-free and RoHS compliant?
Yes, the NVTFS5820NLTWG is Pb-free and RoHS compliant.
- What is the package type of the NVTFS5820NLTWG?
The package type is WDFN-8 (u8FL).
- What is the maximum power dissipation at Tmb = 25°C?
The maximum power dissipation at Tmb = 25°C is 21 W.
- What is the typical gate threshold voltage?
The typical gate threshold voltage (VGS(TH)) is between 1.5 and 2.3 V.
