Overview
The NVTFS5826NLWFTAG is a single N-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The NVTFS5826NLWFTAG features a small footprint of 3.3 x 3.3 mm, making it ideal for compact designs. It is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding environments. The device is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (Tmb = 25°C) | ID | 20 | A |
| Continuous Drain Current (Tmb = 100°C) | ID | 14 | A |
| Power Dissipation (Tmb = 25°C) | PD | 22 | W |
| Power Dissipation (Tmb = 100°C) | PD | 11 | W |
| On-Resistance (VGS = 10 V, ID = 10 A) | RDS(on) | 19 - 24 mΩ | mΩ |
| On-Resistance (VGS = 4.5 V, ID = 10 A) | RDS(on) | 25 - 32 mΩ | mΩ |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to +175 | °C |
| Source Current (Body Diode) | IS | 18 | A |
| Pulsed Drain Current (TA = 25°C, tp = 10 μs) | IDM | 127 | A |
Key Features
- Small Footprint: The device features a compact 3.3 x 3.3 mm WDFN8 package, ideal for space-constrained designs.
- Low On-Resistance: With an RDS(on) of 19 - 24 mΩ at VGS = 10 V and 25 - 32 mΩ at VGS = 4.5 V, it minimizes conduction losses.
- Low Capacitance: Low input, output, and reverse transfer capacitance reduce driver losses.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability in automotive and other demanding applications.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
- Wettable Flanks: The NVTFS5826NLWFTAG version includes wettable flanks for improved solder joint inspection.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and robust performance.
- Power Supplies: Used in high-efficiency power supplies, DC-DC converters, and switch-mode power supplies.
- Motor Control: Ideal for motor drive applications requiring high current and low on-resistance.
- Industrial Control Systems: Applicable in industrial control systems, such as inverter drives and power management systems.
Q & A
- What is the maximum drain-to-source voltage of the NVTFS5826NLWFTAG?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current rating at Tmb = 25°C?
The continuous drain current (ID) at Tmb = 25°C is 20 A.
- What is the on-resistance of the MOSFET at VGS = 10 V and ID = 10 A?
The on-resistance (RDS(on)) at VGS = 10 V and ID = 10 A is 19 - 24 mΩ.
- Is the NVTFS5826NLWFTAG Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55 to +175 °C.
- What is the pulsed drain current rating at TA = 25°C and tp = 10 μs?
The pulsed drain current (IDM) at TA = 25°C and tp = 10 μs is 127 A.
- Is the NVTFS5826NLWFTAG AEC-Q101 qualified?
Yes, the device is AEC-Q101 qualified.
- What is the package type of the NVTFS5826NLWFTAG?
The package type is WDFN8 (3.3 x 3.3 mm).
- What are the key applications of the NVTFS5826NLWFTAG?
Key applications include automotive systems, power supplies, motor control, and industrial control systems.
- Does the NVTFS5826NLWFTAG have wettable flanks?
Yes, the NVTFS5826NLWFTAG version includes wettable flanks for improved solder joint inspection.
