NVTFS5124PLWFTAG
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onsemi NVTFS5124PLWFTAG

Manufacturer No:
NVTFS5124PLWFTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 2.4A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVTFS5124PLWFTAG is a power MOSFET from ON Semiconductor, designed for high-performance applications. This P-channel MOSFET features a compact WDFN8 package, making it ideal for space-constrained designs. It is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive and other stringent application requirements. The device is Pb-free and RoHS compliant, aligning with environmental standards.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-60V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (Tmb = 25°C)ID-6.0A
Continuous Drain Current (Tmb = 100°C)ID-4.0A
Power Dissipation (1/8″ from case for 10 s)TL260°C
Junction-to-Mounting Board Thermal ResistanceRθJ-mb8.4°C/W
Junction-to-Ambient Thermal ResistanceRθJA49.2°C/W
Drain-to-Source On Resistance (VGS = -10 V, ID = -3 A)RDS(on)200-260
Gate Threshold VoltageVGS(TH)-1.5 to -2.5V

Key Features

  • Small Footprint (3.3 x 3.3 mm) for Compact Design
  • Low RDS(on) to Minimize Conduction Losses
  • Low QG and Capacitance to Minimize Driver Losses
  • Wettable Flanks Product (NVTFS5124PLWF)
  • AEC-Q101 Qualified and PPAP Capable
  • Pb-free and RoHS Compliant

Applications

The NVTFS5124PLWFTAG is suitable for a variety of applications, including automotive systems, power management circuits, and other high-reliability environments. Its compact size and low thermal resistance make it ideal for space-constrained designs. It can be used in load switching, power amplifiers, and other power management scenarios where high efficiency and reliability are critical.

Q & A

  1. What is the maximum drain-to-source voltage of the NVTFS5124PLWFTAG? The maximum drain-to-source voltage is -60 V.
  2. What is the continuous drain current at Tmb = 25°C? The continuous drain current at Tmb = 25°C is -6.0 A.
  3. Is the NVTFS5124PLWFTAG AEC-Q101 qualified? Yes, the NVTFS5124PLWFTAG is AEC-Q101 qualified and PPAP capable.
  4. What is the thermal resistance from junction to mounting board? The thermal resistance from junction to mounting board is 8.4 °C/W.
  5. What is the typical on-resistance of the MOSFET at VGS = -10 V and ID = -3 A? The typical on-resistance is 200-260 mΩ.
  6. Is the NVTFS5124PLWFTAG Pb-free and RoHS compliant? Yes, the device is Pb-free and RoHS compliant.
  7. What is the gate threshold voltage range? The gate threshold voltage range is -1.5 to -2.5 V.
  8. What are the typical switching times for turn-on and turn-off? The turn-on delay time is approximately 7 ns, and the turn-off delay time is approximately 13 ns.
  9. What is the maximum junction temperature? The maximum junction temperature is not explicitly stated, but the device is tested at various temperatures including TJ = 25°C, TJ = -55°C, and TJ = 125°C.
  10. What package type does the NVTFS5124PLWFTAG come in? The device comes in a WDFN8 package.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:260mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 18W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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NVTFS5124PLWFTWG
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Similar Products

Part Number NVTFS5124PLWFTAG NVTFS5124PLWFTWG
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 260mOhm @ 3A, 10V 260mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V 6 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V 250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 18W (Tc) 3W (Ta), 18W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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