NVTFS4C13NTAG
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onsemi NVTFS4C13NTAG

Manufacturer No:
NVTFS4C13NTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 14A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVTFS4C13NTAG is a single N-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a compact 8-WDFN package, making it suitable for space-constrained designs. The MOSFET is part of onsemi's u8FL family, known for its excellent thermal performance and reliability.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
RDS(ON) (On-Resistance)9.4 mΩ (typical at VGS = 10 V)
ID (Continuous Drain Current)40 A
PD (Power Dissipation)3 W (at TA), 26 W (at TC)
VGS(th) (Threshold Voltage)1.5 V to 3.5 V
Package8-WDFN (3.3x3.3 mm)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-resistance (RDS(ON)) of 9.4 mΩ for efficient power handling.
  • High continuous drain current (ID) of 40 A.
  • Compact 8-WDFN package for space-saving designs.
  • High power dissipation capability (up to 26 W at TC).
  • Wide operating temperature range from -55°C to 150°C.

Applications

The NVTFS4C13NTAG is suitable for a variety of high-power applications, including:

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power management in automotive and industrial systems.
  • High-frequency switching circuits.

Q & A

  1. What is the maximum drain-source voltage of the NVTFS4C13NTAG?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the typical on-resistance of the NVTFS4C13NTAG?
    The typical on-resistance (RDS(ON)) is 9.4 mΩ at VGS = 10 V.
  3. What is the continuous drain current rating of the NVTFS4C13NTAG?
    The continuous drain current (ID) is 40 A.
  4. What is the package type of the NVTFS4C13NTAG?
    The package type is 8-WDFN (3.3x3.3 mm).
  5. What is the operating temperature range of the NVTFS4C13NTAG?
    The operating temperature range is from -55°C to 150°C.
  6. What are some common applications for the NVTFS4C13NTAG?
    Common applications include DC-DC converters, motor control systems, power management in automotive and industrial systems, and high-frequency switching circuits.
  7. What is the power dissipation capability of the NVTFS4C13NTAG?
    The power dissipation capability is up to 3 W at TA and up to 26 W at TC.
  8. Is the NVTFS4C13NTAG Pb-free?
    Yes, the NVTFS4C13NTAG is Pb-free.
  9. Where can I find detailed specifications for the NVTFS4C13NTAG?
    Detailed specifications can be found in the datasheet available on the onsemi website and other electronic component distributors like Digi-Key.
  10. What is the threshold voltage range of the NVTFS4C13NTAG?
    The threshold voltage (VGS(th)) range is from 1.5 V to 3.5 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:14A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:770 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 26W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Same Series
NVTFS4C13NTWG
NVTFS4C13NTWG
MOSFET N-CH 30V 14A 8WDFN
NVTFS4C13NWFTAG
NVTFS4C13NWFTAG
MOSFET N-CH 30V 14A 8WDFN

Similar Products

Part Number NVTFS4C13NTAG NVTFS4C13NTWG NVTFS4C10NTAG
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta) 14A (Ta) 15.3A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.4mOhm @ 30A, 10V 9.4mOhm @ 30A, 10V 7.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.2 nC @ 10 V 15.2 nC @ 10 V 19.3 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 770 pF @ 15 V 770 pF @ 15 V 993 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 3W (Ta), 26W (Tc) 3W (Ta), 26W (Tc) 3W (Ta), 28W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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