NVTFS4823NTAG
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onsemi NVTFS4823NTAG

Manufacturer No:
NVTFS4823NTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 13A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVTFS4823NTAG is a high-performance N-Channel MOSFET produced by onsemi. This device is designed for a wide range of applications requiring efficient power management and high reliability. The MOSFET features an 8-PowerWDFN package, making it suitable for surface mount technology (SMT) and offering a compact footprint for modern electronic designs.

With its robust specifications, the NVTFS4823NTAG is ideal for use in industrial, automotive, and consumer electronics where high current handling and low on-resistance are critical.

Key Specifications

Parameter Value
Current (Id) 13 A (Ta)
Drain to Source Voltage (Vdss) 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5 V, 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 12 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 175°C (TJ)
Package 8-PowerWDFN
Power Dissipation (Max) 3.1 W (Ta), 21 W (Tc)
Rds On (Max) @ Id, Vgs 10.5 mΩ @ 15 A, 10 V
Supplier Device Package 8-WDFN (3.3x3.3)
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20 V
Vgs(th) (Max) @ Id 2.5 V @ 250 µA

Key Features

  • High Current Handling: The NVTFS4823NTAG can handle up to 13 A of continuous drain current, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum on-resistance of 10.5 mΩ at 10 V, this MOSFET minimizes power losses and enhances efficiency.
  • Wide Operating Temperature Range: The device operates over a temperature range of -55°C to 175°C, ensuring reliability in various environmental conditions.
  • Compact Package: The 8-PowerWDFN package is designed for surface mount technology, providing a compact solution for modern electronic designs.
  • High Gate Charge: The MOSFET has a gate charge of 6 nC at 4.5 V, which is beneficial for fast switching applications.

Applications

  • Industrial Electronics: Suitable for use in industrial control systems, power supplies, and motor control circuits.
  • Automotive Systems: Can be used in automotive applications such as power management, battery management, and motor control.
  • Consumer Electronics: Applicable in consumer electronics like power supplies, DC-DC converters, and audio amplifiers.
  • Power Management: Ideal for power management in servers, data centers, and other high-power computing systems.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the NVTFS4823NTAG?

    The maximum drain to source voltage (Vdss) is 30 V.

  2. What is the package type of the NVTFS4823NTAG?

    The package type is 8-PowerWDFN.

  3. What is the operating temperature range of the NVTFS4823NTAG?

    The operating temperature range is -55°C to 175°C (TJ).

  4. What is the maximum power dissipation of the NVTFS4823NTAG?

    The maximum power dissipation is 3.1 W (Ta) and 21 W (Tc).

  5. What is the typical gate charge (Qg) at 4.5 V for the NVTFS4823NTAG?

    The typical gate charge (Qg) at 4.5 V is 6 nC.

  6. What is the maximum on-resistance (Rds On) at 10 V for the NVTFS4823NTAG?

    The maximum on-resistance (Rds On) at 10 V is 10.5 mΩ.

  7. What is the input capacitance (Ciss) at 12 V for the NVTFS4823NTAG?

    The input capacitance (Ciss) at 12 V is 750 pF.

  8. Is the NVTFS4823NTAG RoHS compliant?

    Yes, the NVTFS4823NTAG is RoHS compliant.

  9. What is the gate-source threshold voltage (Vgs(th)) for the NVTFS4823NTAG?

    The gate-source threshold voltage (Vgs(th)) is 2.5 V at 250 µA.

  10. What are the typical applications of the NVTFS4823NTAG?

    The NVTFS4823NTAG is typically used in industrial electronics, automotive systems, consumer electronics, and power management.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 21W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Same Series
NVTFS4823NWFTWG
NVTFS4823NWFTWG
MOSFET N-CH 30V 13A 8WDFN
NVTFS4823NTWG
NVTFS4823NTWG
MOSFET N-CH 30V 13A 8WDFN

Similar Products

Part Number NVTFS4823NTAG NVTFS4824NTAG NVTFS4823NTWG
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 30 V 30 V -
Current - Continuous Drain (Id) @ 25°C 13A (Ta) 18.2A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 10.5mOhm @ 15A, 10V 4.7mOhm @ 23A, 10V -
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V 14 nC @ 4.5 V -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 12 V 1740 pF @ 12 V -
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 21W (Tc) 3.2W (Ta), 21W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount -
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) -
Package / Case 8-PowerWDFN 8-PowerWDFN -

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