NVTFS4823NTWG
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onsemi NVTFS4823NTWG

Manufacturer No:
NVTFS4823NTWG
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 30V 13A 8WDFN
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The NVTFS4823NTWG is a high-performance Power MOSFET produced by onsemi. This N-Channel MOSFET is designed to offer superior efficiency and reliability in a variety of power management applications. With its robust specifications and advanced features, it is an ideal choice for engineers looking to optimize their designs for high current and low voltage drop.

Key Specifications

ParameterValue
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current30 A

Key Features

  • High continuous drain current of 30 A, making it suitable for high-power applications.
  • Low drain-source on-resistance, which minimizes power losses and enhances efficiency.
  • Robust breakdown voltage of 30 V, ensuring reliable operation under various conditions.
  • Compact package design, facilitating ease of integration in diverse electronic systems.

Applications

The NVTFS4823NTWG is versatile and can be used in a wide range of applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive electronics, such as battery management and power steering.
  • Industrial control systems and automation.

Q & A

  1. What is the transistor polarity of the NVTFS4823NTWG?
    The transistor polarity is N-Channel.
  2. What is the continuous drain current rating of the NVTFS4823NTWG?
    The continuous drain current rating is 30 A.
  3. What is the drain-source breakdown voltage of the NVTFS4823NTWG?
    The drain-source breakdown voltage is 30 V.
  4. What are some common applications of the NVTFS4823NTWG?
    Common applications include power supplies, motor control systems, automotive electronics, and industrial control systems.
  5. Who is the manufacturer of the NVTFS4823NTWG?
    The manufacturer is onsemi.
  6. Where can I find detailed specifications for the NVTFS4823NTWG?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.
  7. What is the significance of the low drain-source on-resistance in the NVTFS4823NTWG?
    The low drain-source on-resistance minimizes power losses and enhances the overall efficiency of the device.
  8. Is the NVTFS4823NTWG suitable for high-power applications?
    Yes, it is suitable for high-power applications due to its high continuous drain current and robust breakdown voltage.
  9. What is the package type of the NVTFS4823NTWG?
    The specific package type is not detailed here, but it is designed to be compact and easy to integrate into various electronic systems.
  10. How can I ensure the reliability of the NVTFS4823NTWG in my design?
    Ensure the reliability by adhering to the specifications and guidelines provided in the datasheet, and by proper thermal management and circuit design.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Same Series
NVTFS4823NWFTWG
NVTFS4823NWFTWG
MOSFET N-CH 30V 13A 8WDFN
NVTFS4823NTWG
NVTFS4823NTWG
MOSFET N-CH 30V 13A 8WDFN

Similar Products

Part Number NVTFS4823NTWG NVTFS4824NTWG NVTFS4823NTAG
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type - N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 30 V 30 V
Current - Continuous Drain (Id) @ 25°C - 18.2A (Ta) 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs - 4.7mOhm @ 23A, 10V 10.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id - 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 14 nC @ 4.5 V 6 nC @ 4.5 V
Vgs (Max) - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 1740 pF @ 12 V 750 pF @ 12 V
FET Feature - - -
Power Dissipation (Max) - 3.2W (Ta), 21W (Tc) 3.1W (Ta), 21W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type - Surface Mount Surface Mount
Supplier Device Package - 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case - 8-PowerWDFN 8-PowerWDFN

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