Overview
The NVMFS6H864NLWFT1G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is part of the Trench8 MOSFET series, which is optimized for superior switching performance. It features advanced T6 technology, offering significant improvements over its predecessors, including a 35% to 40% reduction in gate charge (Qg) and output charge (Qgd).
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Voltage Rating (Vds) | Vds | 80 | V |
| Continuous Drain Current (Id) | Id | 7 A / 22 A | A |
| Maximum ON-Resistance (Rds(on)) | Rds(on) | 29 mΩ | mΩ |
| Gate Charge (Qg) | Qg | Ultra-low | nC |
| Junction-to-Case Thermal Resistance (RθJC) | RθJC | 4.6 | °C/W |
| Package Type | DFNW5 (Pb-Free, Wettable Flanks) |
Key Features
- Low maximum ON-resistance (Rds(on)) of 29 mΩ, ensuring minimal power loss during operation.
- Ultra-low gate charge (Qg) and output charge (Qgd), enhancing switching efficiency.
- Low (Qg) x Rds(on) figure of merit (FOM), ideal for power conversion applications.
- High voltage rating of 80 V, suitable for a wide range of power management tasks.
- Pb-Free and wettable flanks packaging, compliant with environmental regulations and facilitating automated optical inspection.
Applications
The NVMFS6H864NLWFT1G MOSFET is designed for various power management and conversion applications, including but not limited to:
- DC-DC converters
- Power supplies
- Motor control systems
- Automotive electronics
- Industrial power systems
Q & A
- What is the voltage rating of the NVMFS6H864NLWFT1G MOSFET?
The voltage rating (Vds) of the NVMFS6H864NLWFT1G MOSFET is 80 V. - What is the maximum ON-resistance (Rds(on)) of this MOSFET?
The maximum ON-resistance (Rds(on)) is 29 mΩ. - What are the key improvements of the Trench8 MOSFET series over the Trench6 series?
The Trench8 MOSFET series offers a 35% to 40% reduction in gate charge (Qg) and output charge (Qgd) compared to the Trench6 series. - What is the package type of the NVMFS6H864NLWFT1G?
The package type is DFNW5 (Pb-Free, Wettable Flanks). - What are some typical applications for the NVMFS6H864NLWFT1G MOSFET?
Typical applications include DC-DC converters, power supplies, motor control systems, automotive electronics, and industrial power systems. - What is the junction-to-case thermal resistance (RθJC) of this MOSFET?
The junction-to-case thermal resistance (RθJC) is 4.6 °C/W. - Is the NVMFS6H864NLWFT1G Pb-Free?
Yes, the NVMFS6H864NLWFT1G is Pb-Free and has wettable flanks. - What is the continuous drain current rating of the NVMFS6H864NLWFT1G?
The continuous drain current rating is 7 A / 22 A. - Why is the low (Qg) x Rds(on) figure of merit important?
The low (Qg) x Rds(on) figure of merit is crucial for power conversion applications as it indicates high efficiency and minimal power loss during switching. - Where can I find detailed specifications for the NVMFS6H864NLWFT1G?
Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
