NVMFS5C628NLT1G
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onsemi NVMFS5C628NLT1G

Manufacturer No:
NVMFS5C628NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NVMFS5C628NLT1G is a high-performance power MOSFET produced by onsemi. This N-channel MOSFET is designed to offer superior efficiency and reliability in various power management applications. With its advanced technology, it provides low on-resistance and high current handling capabilities, making it an ideal choice for demanding power systems.

Key Specifications

ParameterValue
Channel TypeN Channel
Continuous Drain Current (Id)150 A
Drain-Source Voltage (Vds)60 V
On-Resistance (Rds(on))Tested at 10 V
Transistor Case StyleDFN
Rise Time55 ns
Fall Time8.5 ns
Forward Transconductance - Min110 S

Key Features

  • High continuous drain current of 150 A, making it suitable for high-power applications.
  • Low on-resistance, which reduces power losses and improves efficiency.
  • Fast switching times with a rise time of 55 ns and a fall time of 8.5 ns.
  • Compact DFN package, which is Pb-free and suitable for surface mount assembly.
  • AEC-Q101 qualified, ensuring reliability and performance in automotive applications.

Applications

The NVMFS5C628NLT1G is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive power management and control systems.
  • Power supplies: Its high current handling and low on-resistance make it ideal for high-power supply designs.
  • Motor control: It can be used in motor drive applications where high current and efficient switching are required.
  • Industrial power systems: It is suitable for use in industrial power management and control systems where reliability and efficiency are critical.

Q & A

  1. What is the continuous drain current of the NVMFS5C628NLT1G?
    The continuous drain current is 150 A.
  2. What is the drain-source voltage rating of the NVMFS5C628NLT1G?
    The drain-source voltage rating is 60 V.
  3. What is the on-resistance of the NVMFS5C628NLT1G?
    The on-resistance is tested at 10 V.
  4. What is the package type of the NVMFS5C628NLT1G?
    The package type is DFN.
  5. Is the NVMFS5C628NLT1G AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  6. What are the rise and fall times of the NVMFS5C628NLT1G?
    The rise time is 55 ns, and the fall time is 8.5 ns.
  7. What is the forward transconductance of the NVMFS5C628NLT1G?
    The forward transconductance is a minimum of 110 S.
  8. Is the NVMFS5C628NLT1G Pb-free?
    Yes, it is Pb-free.
  9. What are some common applications of the NVMFS5C628NLT1G?
    Common applications include automotive systems, power supplies, motor control, and industrial power systems.
  10. Where can I find detailed specifications for the NVMFS5C628NLT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Farnell.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:150A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 135µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.7W (Ta), 110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS5C628NLT1G NVMFS5C638NLT1G NVMFS5C628NT1G NVMFS5C628NLT3G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Not For New Designs Active Active Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc) 26A (Ta), 133A (Tc) 28A (Ta), 150A (Tc) 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 50A, 10V 3mOhm @ 50A, 10V 3mOhm @ 27A, 10V 2.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 135µA 2V @ 250µA 4V @ 135µA 2V @ 135µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V 40.7 nC @ 10 V 34 nC @ 10 V 52 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 25 V 2880 pF @ 25 V 2630 pF @ 30 V 3600 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 3.7W (Ta), 110W (Tc) 4W (Ta), 100W (Tc) 3.7W (Ta), 110W (Tc) 3.7W (Ta), 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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