NVMFS5C638NLT1G
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onsemi NVMFS5C638NLT1G

Manufacturer No:
NVMFS5C638NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 26A/133A 5DFN
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The onsemi NVMFS5C638NLT1G is a high-performance N-Channel power MOSFET designed for a wide range of applications requiring high current handling and low on-resistance. This device is part of onsemi's portfolio of automotive-grade MOSFETs, qualified to AEC-Q101 standards, ensuring reliability and durability in demanding environments.

Key Specifications

ParameterValue
Maximum Operating Temperature+175°C
Power Dissipation (Pd)100 W
Channel ModeEnhancement
Drain-Source Voltage (Vds)60 V
Continuous Drain Current (Id)133 A
On-Resistance (Rds(on))0.0026 Ω
Package Type5-Pin DFN, Surface Mount
QualificationAEC-Q101

Key Features

  • High current handling capability of up to 133 A.
  • Low on-resistance of 0.0026 Ω, reducing power losses.
  • AEC-Q101 qualified, ensuring automotive-grade reliability.
  • High maximum operating temperature of +175°C.
  • Compact 5-pin DFN package, suitable for surface mount applications.

Applications

The onsemi NVMFS5C638NLT1G is suitable for various high-power applications, including:

  • Automotive systems such as electric vehicles, hybrid vehicles, and battery management systems.
  • Industrial power supplies and motor control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-power DC-DC converters and power factor correction circuits.

Q & A

  1. What is the maximum operating temperature of the NVMFS5C638NLT1G?
    The maximum operating temperature is +175°C.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is 133 A.
  3. What is the on-resistance (Rds(on)) of the NVMFS5C638NLT1G?
    The on-resistance is 0.0026 Ω.
  4. What package type is used for the NVMFS5C638NLT1G?
    The package type is a 5-pin DFN, surface mount.
  5. Is the NVMFS5C638NLT1G qualified for automotive applications?
    Yes, it is qualified to AEC-Q101 standards.
  6. What are some common applications for this MOSFET?
    Common applications include automotive systems, industrial power supplies, renewable energy systems, and high-power DC-DC converters.
  7. What is the maximum power dissipation (Pd) of the NVMFS5C638NLT1G?
    The maximum power dissipation is 100 W.
  8. What is the drain-source voltage (Vds) rating of this MOSFET?
    The drain-source voltage rating is 60 V.
  9. Is the NVMFS5C638NLT1G lead-free?
    Yes, it is lead-free (Pb-Free).
  10. Where can I find detailed specifications for the NVMFS5C638NLT1G?
    Detailed specifications can be found on the onsemi official website or through distributors like Mouser, RS Components, and element14.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:26A (Ta), 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2880 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):4W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Same Series
NVMFS5C638NLWFT1G
NVMFS5C638NLWFT1G
MOSFET N-CH 60V 26A/133A 5DFN

Similar Products

Part Number NVMFS5C638NLT1G NVMFS5C628NLT1G
Manufacturer onsemi onsemi
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 26A (Ta), 133A (Tc) 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 50A, 10V 2.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 135µA
Gate Charge (Qg) (Max) @ Vgs 40.7 nC @ 10 V 52 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2880 pF @ 25 V 3600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 4W (Ta), 100W (Tc) 3.7W (Ta), 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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