Overview
The NVMFS5C628NLAFT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed for compact and efficient power management in various applications. It features a small footprint DFN5 package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TJ = 25°C) | ID | 150 | A |
| Continuous Drain Current (TJ = 100°C) | ID | 110 | A |
| Power Dissipation (TJ = 25°C) | PD | 110 | W |
| Power Dissipation (TJ = 100°C) | PD | 56 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 900 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Source Current (Body Diode) | IS | 120 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 565 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) | RDS(on) | 2.0 - 2.4 | mΩ |
| Drain-to-Source On Resistance (VGS = 4.5 V, ID = 50 A) | RDS(on) | 2.6 - 3.3 | mΩ |
Key Features
- Small Footprint: The DFN5 package measures 5x6 mm, ideal for compact designs.
- Low RDS(on): Minimizes conduction losses with RDS(on) as low as 2.0 mΩ at VGS = 10 V and ID = 50 A.
- Low QG and Capacitance: Reduces driver losses with low total gate charge (QG) and capacitance.
- Wettable Flank Option: Available in DFNW5 package with wettable flanks for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Power Management: Ideal for power management in DC-DC converters, motor control, and other high-power applications.
- Industrial Control: Used in industrial control systems, power supplies, and other high-reliability industrial applications.
- Consumer Electronics: Can be used in high-power consumer electronics such as power adapters and battery chargers.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C628NLAFT1G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current at TJ = 25°C?
The continuous drain current (ID) at TJ = 25°C is 150 A.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is 1.2 to 2.0 V.
- What is the typical drain-to-source on resistance at VGS = 10 V and ID = 50 A?
The typical drain-to-source on resistance (RDS(on)) at VGS = 10 V and ID = 50 A is 2.4 mΩ.
- Is the NVMFS5C628NLAFT1G Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +175°C.
- What is the single pulse drain-to-source avalanche energy?
The single pulse drain-to-source avalanche energy (EAS) is 565 mJ.
- What package options are available for the NVMFS5C628NLAFT1G?
The device is available in DFN5 and DFNW5 packages, with the latter offering wettable flanks for enhanced optical inspection.
- Is the NVMFS5C628NLAFT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C.
