Overview
The NVMFS5C604NLWFAFT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. With its compact DFN5 package (5x6 mm), it is ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and suitability for automotive and other demanding environments. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 287 | A |
| Continuous Drain Current (TC = 100°C) | ID | 203 | A |
| Power Dissipation (TC = 25°C) | PD | 200 | W |
| Power Dissipation (TC = 100°C) | PD | 100 | W |
| Pulsed Drain Current | IDM | 900 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) | RDS(on) | 0.93 - 1.2 | mΩ |
| Drain-to-Source On Resistance (VGS = 4.5 V, ID = 50 A) | RDS(on) | 1.25 - 1.7 | mΩ |
Key Features
- Small Footprint: The DFN5 package (5x6 mm) allows for compact design and space efficiency.
- Low RDS(on): Minimizes conduction losses with on-resistance as low as 0.93 mΩ at VGS = 10 V and ID = 50 A.
- Low QG and Capacitance: Reduces driver losses due to low total gate charge and capacitance.
- Wettable Flank Option: The NVMFS5C604NLWFAFT1G variant includes wettable flanks for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and suitability for automotive and other demanding applications.
- Pb-Free and RoHS Compliant: Meets environmental regulations.
Applications
The NVMFS5C604NLWFAFT1G is suitable for a variety of high-current applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
- Power supplies: High current handling and low on-resistance make it suitable for high-power supply designs.
- Motor control: Used in motor drive applications requiring high current and low conduction losses.
- Industrial control: Suitable for industrial power management and control systems where reliability and efficiency are critical.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C604NLWFAFT1G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current at 25°C and 100°C?
The continuous drain current is 287 A at 25°C and 203 A at 100°C.
- What is the typical on-resistance of the MOSFET at VGS = 10 V and ID = 50 A?
The typical on-resistance (RDS(on)) is 1.2 mΩ at VGS = 10 V and ID = 50 A.
- Is the NVMFS5C604NLWFAFT1G AEC-Q101 qualified?
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55°C to +175°C.
- What is the pulsed drain current rating?
The pulsed drain current (IDM) is 900 A.
- Is the device Pb-free and RoHS compliant?
- What is the package type of the NVMFS5C604NLWFAFT1G?
The package type is DFN5 (5x6 mm).
- What are the key benefits of the wettable flank option?
The wettable flank option enhances optical inspection, which is crucial for quality control and reliability.
- What are some typical applications for this MOSFET?
Typical applications include automotive systems, power supplies, motor control, and industrial control systems.
