Overview
The NVMFS5C442NWFAFT1G is a single N-channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a small footprint in a DFNW5 package, making it ideal for compact designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 140 | A |
| Continuous Drain Current (TC = 100°C) | ID | 99 | A |
| Power Dissipation (TC = 25°C) | PD | 83 | W |
| Power Dissipation (TC = 100°C) | PD | 42 | W |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) | RDS(on) | 2.3 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 2.0 - 4.0 | V |
| Input Capacitance | CISS | 2100 | pF |
| Output Capacitance | COSS | 1100 | pF |
| Reverse Transfer Capacitance | CRSS | 40 | pF |
| Total Gate Charge | QG(TOT) | 32 | nC |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to +175 | °C |
Key Features
- Small Footprint: The DFNW5 package measures 5x6 mm, ideal for compact designs.
- Low RDS(on): Minimizes conduction losses with a drain-to-source on-resistance of 2.3 mΩ at VGS = 10 V and ID = 50 A.
- Low QG and Capacitance: Reduces driver losses with low total gate charge and capacitance.
- Wettable Flank Option: The NVMFS5C442NWFAFT1G features wettable flanks for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Power Management: Ideal for power management in high-current, low-voltage applications.
- Industrial Control: Used in industrial control systems requiring high reliability and performance.
- Consumer Electronics: Applicable in consumer electronics where compact design and high efficiency are crucial.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C442NWFAFT1G?
The maximum drain-to-source voltage is 40 V.
- What is the continuous drain current at TC = 25°C?
The continuous drain current at TC = 25°C is 140 A.
- What is the typical drain-to-source on-resistance?
The typical drain-to-source on-resistance is 2.3 mΩ at VGS = 10 V and ID = 50 A.
- Is the NVMFS5C442NWFAFT1G Pb-free and RoHS compliant?
Yes, it is Pb-free and RoHS compliant.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55 to +175°C.
- What package type does the NVMFS5C442NWFAFT1G come in?
The device comes in a DFNW5 package with wettable flanks.
- Is the NVMFS5C442NWFAFT1G AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the input capacitance of the NVMFS5C442NWFAFT1G?
The input capacitance is 2100 pF.
- What is the total gate charge of the NVMFS5C442NWFAFT1G?
The total gate charge is 32 nC.
- What are some typical applications of the NVMFS5C442NWFAFT1G?
Typical applications include automotive systems, power management, industrial control, and consumer electronics.
