Overview
The NVMFS5C442NLWFAFT1G is a high-performance, single N-channel MOSFET produced by onsemi. This device is designed for compact and efficient power management in various applications. It features a small footprint in a DFN5/DFNW5 package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDSS) | 40 | V |
| Gate-to-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 130 | A |
| Continuous Drain Current (ID) at TC = 100°C | 95 | A |
| Power Dissipation (PD) at TC = 25°C | 83 | W |
| Power Dissipation (PD) at TC = 100°C | 42 | W |
| Pulsed Drain Current (IDM) at TA = 25°C, tp = 10 μs | 900 | A |
| Operating Junction and Storage Temperature Range (TJ, Tstg) | −55 to +175 | °C |
| Gate Threshold Voltage (VGS(TH)) | 1.2 to 2.0 | V |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 50 A | 2.0 to 2.5 | mΩ |
| Forward Transconductance (gFS) at VDS = 15 V, ID = 50 A | 116 | S |
| Total Gate Charge (QG(TOT)) at VGS = 4.5 V, VDS = 32 V; ID = 50 A | 23 | nC |
Key Features
- Small Footprint: Compact design in a 5x6 mm DFN5/DFNW5 package.
- Low RDS(on): Minimizes conduction losses with RDS(on) as low as 2.0 mΩ at VGS = 10 V.
- Low QG and Capacitance: Reduces driver losses with low total gate charge and capacitance.
- Wettable Flank Option: Enhanced optical inspection capability with the wettable flank option.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
- Power Management: Ideal for power management in DC-DC converters, motor control, and power supplies.
- Industrial Control: Used in industrial control systems, robotics, and other high-power applications.
- Consumer Electronics: Can be used in high-power consumer electronics such as gaming consoles and high-end computing systems.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NVMFS5C442NLWFAFT1G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 130 A.
- What is the power dissipation (PD) at TC = 25°C?
The power dissipation (PD) at TC = 25°C is 83 W.
- What is the operating junction and storage temperature range (TJ, Tstg)?
The operating junction and storage temperature range (TJ, Tstg) is −55 to +175 °C.
- What is the gate threshold voltage (VGS(TH))?
The gate threshold voltage (VGS(TH)) is between 1.2 to 2.0 V.
- What is the drain-to-source on resistance (RDS(on)) at VGS = 10 V, ID = 50 A?
The drain-to-source on resistance (RDS(on)) at VGS = 10 V, ID = 50 A is between 2.0 to 2.5 mΩ.
- Is the NVMFS5C442NLWFAFT1G Pb-free and RoHS compliant?
Yes, the NVMFS5C442NLWFAFT1G is Pb-free and RoHS compliant.
- What are the typical applications of the NVMFS5C442NLWFAFT1G?
Typical applications include automotive systems, power management, industrial control, and high-power consumer electronics.
- What is the package type of the NVMFS5C442NLWFAFT1G?
The package type is DFN5/DFNW5 with wettable flanks.
- Is the NVMFS5C442NLWFAFT1G AEC-Q101 qualified?
Yes, the NVMFS5C442NLWFAFT1G is AEC-Q101 qualified and PPAP capable.
