Overview
The NVMFS5C442NAFT1G is a single N-channel power MOSFET designed and manufactured by onsemi. This device is optimized for high-current applications in power management circuits, offering a combination of low on-state resistance, high current handling, and compact packaging. It is particularly suited for applications requiring efficient power switching and minimal conduction losses.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 140 | A |
| Continuous Drain Current (TC = 100°C) | ID | 99 | A |
| Power Dissipation (TC = 25°C) | PD | 83 | W |
| Power Dissipation (TC = 100°C) | PD | 42 | W |
| Drain-to-Source On Resistance | RDS(on) | 2.3 mΩ @ 10 V | mΩ |
| Gate Threshold Voltage | VGS(TH) | 2.0 - 4.0 | V |
| Total Gate Charge | QG(TOT) | 32 nC | nC |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to +175 | °C |
Key Features
- Small Footprint: The device comes in a compact DFN5 or DFNW5 package, measuring 5x6 mm, ideal for space-constrained designs.
- Low RDS(on): With a drain-to-source on resistance of 2.3 mΩ at 10 V, it minimizes conduction losses.
- Low QG and Capacitance: Low total gate charge and capacitance reduce driver losses and improve switching efficiency.
- Wettable Flank Option: The NVMFS5C442NWF variant features wettable flanks for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive applications, meeting stringent quality and reliability standards.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with global regulations.
Applications
- Power Management Circuits: Ideal for high-current switching applications in power management systems.
- Automotive Systems: Suitable for use in automotive electronics due to its AEC-Q101 qualification and PPAP capability.
- Industrial Power Supplies: Used in high-efficiency power supplies and DC-DC converters.
- Motor Control and Drives: Applicable in motor control circuits requiring high current handling and low on-state resistance.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C442NAFT1G?
The maximum drain-to-source voltage is 40 V.
- What is the continuous drain current at 25°C?
The continuous drain current at 25°C is 140 A.
- What is the typical on-state resistance of the MOSFET?
The typical on-state resistance is 2.3 mΩ at 10 V.
- Is the NVMFS5C442NAFT1G Pb-Free and RoHS compliant?
Yes, it is Pb-Free and RoHS compliant.
- What are the operating junction and storage temperatures?
The operating junction and storage temperatures range from -55 to +175 °C.
- What is the gate threshold voltage range?
The gate threshold voltage range is 2.0 to 4.0 V.
- Does the NVMFS5C442NAFT1G have a wettable flank option?
Yes, the NVMFS5C442NWF variant features wettable flanks for enhanced optical inspection.
- Is the device AEC-Q101 qualified?
Yes, the device is AEC-Q101 qualified and PPAP capable.
- What is the total gate charge at 10 V?
The total gate charge at 10 V is 32 nC.
- What are the typical turn-on and turn-off delay times?
The typical turn-on delay time is 11 ns, and the typical turn-off delay time is 23 ns.
