Overview
The NVMFS5C442NLAFT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed for compact and efficient power management in various applications. It features a small footprint of 5x6 mm, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 130 | A |
| Continuous Drain Current (TC = 100°C) | ID | 95 | A |
| Power Dissipation (TC = 25°C) | PD | 83 | W |
| Power Dissipation (TC = 100°C) | PD | 42 | W |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) | RDS(on) | 2.0 - 2.5 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Junction-to-Case Thermal Resistance | RθJC | 1.8 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 41 | °C/W |
Key Features
- Compact Design: Small footprint of 5x6 mm, ideal for space-constrained applications.
- Low RDS(on): Minimizes conduction losses, enhancing overall efficiency.
- Low QG and Capacitance: Reduces driver losses, improving switching performance.
- Wettable Flank Option: NVMFS5C442NLWF version offers enhanced optical inspection capabilities.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-free and RoHS Compliant: Aligns with environmental regulations.
Applications
- Automotive Systems: Suitable for various automotive applications due to AEC-Q101 qualification.
- Power Management: Ideal for power management in industrial, consumer, and automotive electronics.
- Switching and DC-DC Converters: Optimized for high-efficiency switching and DC-DC converter applications.
- Motor Control: Used in motor control circuits for efficient and reliable operation.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C442NLAFT1G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 130 A.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is 1.2 to 2.0 V.
- Is the NVMFS5C442NLAFT1G Pb-free and RoHS compliant?
- What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RθJC) is 1.8 °C/W.
- What are the typical applications of the NVMFS5C442NLAFT1G?
Typical applications include automotive systems, power management, switching and DC-DC converters, and motor control.
- What is the maximum power dissipation at TC = 25°C?
The maximum power dissipation (PD) at TC = 25°C is 83 W.
- Is the NVMFS5C442NLAFT1G AEC-Q101 qualified?
- What is the forward diode voltage at TJ = 25°C?
The forward diode voltage (VSD) at TJ = 25°C is 0.85 to 1.2 V.
- What is the reverse recovery time?
The reverse recovery time (tRR) is 46 ns.
