Overview
The NVMFS5C426NWFAFT1G is a high-performance, single N-channel MOSFET produced by onsemi. This device is designed for compact and efficient power management in various applications. It features a small footprint in a DFNW5 package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-to-Source Voltage | VDSS | 40 | V |
Gate-to-Source Voltage | VGS | ±20 | V |
Continuous Drain Current (TC = 25°C) | ID | 235 | A |
Continuous Drain Current (TC = 100°C) | ID | 166 | A |
Power Dissipation (TC = 25°C) | PD | 128 | W |
Power Dissipation (TC = 100°C) | PD | 64 | W |
Operating Junction and Storage Temperature | TJ, Tstg | −55 to +175 | °C |
Drain-to-Source On Resistance | RDS(on) | 1.1 - 1.3 | mΩ |
Total Gate Charge | QG(TOT) | 65 | nC |
Turn-On Delay Time | td(ON) | 15 | ns |
Turn-Off Delay Time | td(OFF) | 36 | ns |
Key Features
- Small Footprint: The device is packaged in a compact DFNW5 (5x6 mm) package, ideal for space-constrained designs.
- Low RDS(on): Minimizes conduction losses with a low on-resistance of 1.1 - 1.3 mΩ.
- Low QG and Capacitance: Reduces driver losses due to low total gate charge and capacitance.
- Wettable Flank Option: The NVMFS5C426NWFAFT1G features wettable flanks for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Power Management: Ideal for power management in DC-DC converters, motor control, and other high-power applications.
- Industrial Control: Used in industrial control systems, robotics, and other high-reliability industrial applications.
- Consumer Electronics: Can be used in high-power consumer electronics such as power supplies and motor drives.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C426NWFAFT1G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current at 25°C and 100°C?
The continuous drain current is 235 A at 25°C and 166 A at 100°C.
- What is the on-resistance of the MOSFET?
The on-resistance (RDS(on)) is between 1.1 and 1.3 mΩ.
- Is the NVMFS5C426NWFAFT1G Pb-free and RoHS compliant?
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +175 °C.
- What is the total gate charge of the MOSFET?
The total gate charge (QG(TOT)) is 65 nC.
- What are the turn-on and turn-off delay times?
The turn-on delay time (td(ON)) is 15 ns, and the turn-off delay time (td(OFF)) is 36 ns.
- Is the device AEC-Q101 qualified and PPAP capable?
- What is the package type of the NVMFS5C426NWFAFT1G?
The device is packaged in a DFNW5 (5x6 mm) package with wettable flanks.
- What are some typical applications of the NVMFS5C426NWFAFT1G?
The device is suitable for automotive systems, power management, industrial control, and high-power consumer electronics.