NVMFS5C426NWFAFT1G
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onsemi NVMFS5C426NWFAFT1G

Manufacturer No:
NVMFS5C426NWFAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 41A/235A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NVMFS5C426NWFAFT1G is a high-performance, single N-channel MOSFET produced by onsemi. This device is designed for compact and efficient power management in various applications. It features a small footprint in a DFNW5 package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 40 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TC = 25°C) ID 235 A
Continuous Drain Current (TC = 100°C) ID 166 A
Power Dissipation (TC = 25°C) PD 128 W
Power Dissipation (TC = 100°C) PD 64 W
Operating Junction and Storage Temperature TJ, Tstg −55 to +175 °C
Drain-to-Source On Resistance RDS(on) 1.1 - 1.3
Total Gate Charge QG(TOT) 65 nC
Turn-On Delay Time td(ON) 15 ns
Turn-Off Delay Time td(OFF) 36 ns

Key Features

  • Small Footprint: The device is packaged in a compact DFNW5 (5x6 mm) package, ideal for space-constrained designs.
  • Low RDS(on): Minimizes conduction losses with a low on-resistance of 1.1 - 1.3 mΩ.
  • Low QG and Capacitance: Reduces driver losses due to low total gate charge and capacitance.
  • Wettable Flank Option: The NVMFS5C426NWFAFT1G features wettable flanks for enhanced optical inspection.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
  • Pb-Free and RoHS Compliant: Aligns with environmental regulations.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Power Management: Ideal for power management in DC-DC converters, motor control, and other high-power applications.
  • Industrial Control: Used in industrial control systems, robotics, and other high-reliability industrial applications.
  • Consumer Electronics: Can be used in high-power consumer electronics such as power supplies and motor drives.

Q & A

  1. What is the maximum drain-to-source voltage of the NVMFS5C426NWFAFT1G?

    The maximum drain-to-source voltage (VDSS) is 40 V.

  2. What is the continuous drain current at 25°C and 100°C?

    The continuous drain current is 235 A at 25°C and 166 A at 100°C.

  3. What is the on-resistance of the MOSFET?

    The on-resistance (RDS(on)) is between 1.1 and 1.3 mΩ.

  4. Is the NVMFS5C426NWFAFT1G Pb-free and RoHS compliant?
  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is −55 to +175 °C.

  6. What is the total gate charge of the MOSFET?

    The total gate charge (QG(TOT)) is 65 nC.

  7. What are the turn-on and turn-off delay times?

    The turn-on delay time (td(ON)) is 15 ns, and the turn-off delay time (td(OFF)) is 36 ns.

  8. Is the device AEC-Q101 qualified and PPAP capable?
  9. What is the package type of the NVMFS5C426NWFAFT1G?

    The device is packaged in a DFNW5 (5x6 mm) package with wettable flanks.

  10. What are some typical applications of the NVMFS5C426NWFAFT1G?

    The device is suitable for automotive systems, power management, industrial control, and high-power consumer electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:41A (Ta), 235A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 128W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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In Stock

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Similar Products

Part Number NVMFS5C426NWFAFT1G NVMFS5C426NWFAFT3G
Manufacturer onsemi onsemi
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 41A (Ta), 235A (Tc) 41A (Ta), 235A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 50A, 10V 1.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V 65 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 25 V 4300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 128W (Tc) 3.8W (Ta), 128W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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