NVMFS5A160PLZWFT1G
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onsemi NVMFS5A160PLZWFT1G

Manufacturer No:
NVMFS5A160PLZWFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 15A/100A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NVMFS5A160PLZWFT1G is a high-performance P-Channel MOSFET manufactured by onsemi. This device is designed to provide excellent electrical and thermal characteristics, making it suitable for a wide range of applications. With its robust construction and advanced technology, the NVMFS5A160PLZWFT1G offers reliable operation in various power management and switching circuits.

Key Specifications

ParameterValueUnit
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C15A
On-Resistance (Rds(on)) @ 10V, 50A5.8
Maximum Operating Temperature+175°C
Power Dissipation (Pd)200W
Junction to Case Thermal Resistance (RθJC)0.75°C/W

Key Features

  • High current capability of up to 15A at 25°C
  • Low on-resistance of 5.8mΩ at 10V, 50A
  • High drain to source voltage rating of 60V
  • Enhancement mode operation
  • AEC-Q101 qualified for automotive applications
  • Compact SO-8-FL-5.8mm package

Applications

The NVMFS5A160PLZWFT1G is versatile and can be used in various applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive power management and switching circuits.
  • Power supplies: Its high current and low on-resistance make it ideal for power supply designs.
  • Motor control: It can be used in motor control circuits due to its high current handling capability.
  • Industrial control systems: It is suitable for use in industrial control systems requiring reliable and efficient power management.

Q & A

  1. What is the maximum operating temperature of the NVMFS5A160PLZWFT1G?
    The maximum operating temperature is +175°C.
  2. What is the drain to source voltage rating of this MOSFET?
    The drain to source voltage rating is 60V.
  3. What is the continuous drain current at 25°C?
    The continuous drain current at 25°C is 15A.
  4. What is the on-resistance of the NVMFS5A160PLZWFT1G at 10V, 50A?
    The on-resistance is 5.8mΩ at 10V, 50A.
  5. Is the NVMFS5A160PLZWFT1G AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified for automotive applications.
  6. What is the package type of the NVMFS5A160PLZWFT1G?
    The package type is SO-8-FL-5.8mm.
  7. What is the power dissipation capability of this MOSFET?
    The power dissipation capability is 200W.
  8. What are some common applications for the NVMFS5A160PLZWFT1G?
    Common applications include automotive systems, power supplies, motor control, and industrial control systems.
  9. What is the junction to case thermal resistance of the NVMFS5A160PLZWFT1G?
    The junction to case thermal resistance is 0.75°C/W.
  10. Is the NVMFS5A160PLZWFT1G suitable for high-current applications?
    Yes, it is suitable for high-current applications due to its high current handling capability.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:160 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7700 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Same Series
NVMFS5A160PLZT3G
NVMFS5A160PLZT3G
MOSFET P-CH 60V 15A/100A 5DFN
NVMFS5A160PLZWFT3G
NVMFS5A160PLZWFT3G
MOSFET P-CH 60V 15A/100A 5DFN
NVMFS5A160PLZT1G
NVMFS5A160PLZT1G
MOSFET P-CH 60V 15A/100A 5DFN

Similar Products

Part Number NVMFS5A160PLZWFT1G NVMFS5A160PLZWFT3G NVMFS5A140PLZWFT1G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 40 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 100A (Tc) 15A (Ta), 100A (Tc) 20A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.7mOhm @ 50A, 10V 7.7mOhm @ 50A, 10V 4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA 2.6V @ 1mA 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V 160 nC @ 10 V 136 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7700 pF @ 20 V 7700 pF @ 20 V 7400 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 200W (Tc) 3.8W (Ta), 200W (Tc) 3.8W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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