NVMFS5A140PLZWFT1G
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onsemi NVMFS5A140PLZWFT1G

Manufacturer No:
NVMFS5A140PLZWFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 20A/140A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NVMFS5A140PLZWFT1G is a power MOSFET produced by onsemi, designed to provide high performance and reliability in various power management applications. This single P-Channel MOSFET is known for its low on-resistance and high current handling capabilities, making it suitable for a wide range of electronic systems.

Key Specifications

ParameterValueUnit
Junction to Case Thermal Resistance (RθJC)0.75°C/W
Junction to Ambient Thermal Resistance (RθJA)-°C/W
Drain to Source Voltage (Vds)-V
Gate to Source Voltage (Vgs)-V
Continuous Drain Current (Id)-A
Pulsed Drain Current (Idp)-A

Key Features

  • Low on-resistance for efficient power handling
  • High current handling capability
  • Single P-Channel configuration for simplicity in design
  • Robust thermal performance with low junction to case thermal resistance
  • Suitable for high-frequency switching applications

Applications

  • Power management in consumer electronics
  • Automotive systems requiring high reliability and efficiency
  • Industrial power supplies and motor control systems
  • Switch-mode power supplies and DC-DC converters
  • High-frequency switching applications such as audio amplifiers and RF amplifiers

Q & A

  1. What is the primary function of the NVMFS5A140PLZWFT1G? The primary function is to act as a power MOSFET for efficient power management in various electronic systems.
  2. What is the junction to case thermal resistance of the NVMFS5A140PLZWFT1G? The junction to case thermal resistance (RθJC) is 0.75 °C/W.
  3. In what types of applications is the NVMFS5A140PLZWFT1G commonly used? It is commonly used in consumer electronics, automotive systems, industrial power supplies, and high-frequency switching applications.
  4. What are the key benefits of using the NVMFS5A140PLZWFT1G? The key benefits include low on-resistance, high current handling capability, and robust thermal performance.
  5. Who is the manufacturer of the NVMFS5A140PLZWFT1G? The manufacturer is onsemi.
  6. Where can I find detailed specifications for the NVMFS5A140PLZWFT1G? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.
  7. What is the significance of the 'P-Channel' configuration in the NVMFS5A140PLZWFT1G? The P-Channel configuration allows for simpler design and integration in many power management circuits.
  8. Can the NVMFS5A140PLZWFT1G be used in high-frequency switching applications? Yes, it is suitable for high-frequency switching applications due to its low on-resistance and high current handling capabilities.
  9. What kind of thermal performance can be expected from the NVMFS5A140PLZWFT1G? It offers robust thermal performance with a low junction to case thermal resistance.
  10. Are there any specific handling or storage requirements for the NVMFS5A140PLZWFT1G? Yes, it should be handled and stored according to the guidelines provided in the datasheet to ensure longevity and performance.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:136 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7400 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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MOSFET P-CH 40V 20A/140A 5DFN
NVMFS5A140PLZT3G
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Similar Products

Part Number NVMFS5A140PLZWFT1G NVMFS5A140PLZWFT3G NVMFS5A160PLZWFT1G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 140A (Tc) 20A (Ta), 140A (Tc) 15A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 50A, 10V 4.2mOhm @ 50A, 10V 7.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA 2.6V @ 1mA 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 136 nC @ 10 V 136 nC @ 10 V 160 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7400 pF @ 20 V 7400 pF @ 20 V 7700 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 200W (Tc) 3.8W (Ta), 200W (Tc) 3.8W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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