Overview
The NVMFS5826NLWFT1G is a power MOSFET produced by onsemi, designed for high-performance applications requiring low on-resistance and minimal power losses. This single N-channel MOSFET features a compact DFN5 (SO-8FL) package, making it ideal for space-constrained designs. With a drain-to-source voltage (VDSS) of 60 V and a continuous drain current (ID) of up to 26 A, this device is suitable for a wide range of power management and switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDSS) | 60 | V |
| Gate-to-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at Tmb = 25°C | 26 | A |
| Continuous Drain Current (ID) at Tmb = 100°C | 19 | A |
| Power Dissipation (PD) at Tmb = 25°C | 39 | W |
| Power Dissipation (PD) at Tmb = 100°C | 19 | W |
| Pulsed Drain Current (IDM) | 130 | A |
| Operating Junction and Storage Temperature (TJ, Tstg) | -55 to +175 | °C |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 10 A | 18-24 | mΩ |
| Gate Threshold Voltage (VGS(TH)) | 1.5-2.5 | V |
| Total Gate Charge (QG(TOT)) at VGS = 10 V, VDS = 48 V, ID = 10 A | 17 | nC |
Key Features
- Compact Design: Small footprint in a DFN5 (SO-8FL) package, ideal for space-constrained applications.
- Low On-Resistance: Minimizes conduction losses with RDS(on) as low as 18 mΩ at VGS = 10 V, ID = 10 A.
- Low Gate Charge and Capacitance: Reduces driver losses and enhances switching performance.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive applications requiring high reliability.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with global regulations.
- Wettable Flanks Product: Enhances solderability and inspection capabilities.
Applications
- Power Management: Ideal for DC-DC converters, power supplies, and voltage regulators.
- Automotive Systems: Suitable for automotive applications such as motor control, battery management, and power distribution.
- Industrial Control: Used in industrial power supplies, motor drives, and control systems.
- Consumer Electronics: Applicable in high-power consumer electronics such as gaming consoles and high-end computing systems.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NVMFS5826NLWFT1G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current (ID) at Tmb = 25°C?
The continuous drain current (ID) at Tmb = 25°C is 26 A.
- What is the typical on-resistance (RDS(on)) at VGS = 10 V, ID = 10 A?
The typical on-resistance (RDS(on)) at VGS = 10 V, ID = 10 A is 18-24 mΩ.
- Is the NVMFS5826NLWFT1G AEC-Q101 qualified?
Yes, the NVMFS5826NLWFT1G is AEC-Q101 qualified and PPAP capable.
- What is the operating junction temperature range?
The operating junction temperature range is -55°C to +175°C.
- What is the total gate charge (QG(TOT)) at VGS = 10 V, VDS = 48 V, ID = 10 A?
The total gate charge (QG(TOT)) at VGS = 10 V, VDS = 48 V, ID = 10 A is 17 nC.
- Is the NVMFS5826NLWFT1G Pb-Free and RoHS compliant?
Yes, the NVMFS5826NLWFT1G is Pb-Free and RoHS compliant.
- What is the package type of the NVMFS5826NLWFT1G?
The package type is DFN5 (SO-8FL).
- What are some typical applications of the NVMFS5826NLWFT1G?
Typical applications include power management, automotive systems, industrial control, and consumer electronics.
- What is the maximum power dissipation (PD) at Tmb = 25°C?
The maximum power dissipation (PD) at Tmb = 25°C is 39 W.
- What is the turn-on delay time (td(ON)) at VGS = 4.5 V, VDS = 48 V, ID = 10 A?
The turn-on delay time (td(ON)) at VGS = 4.5 V, VDS = 48 V, ID = 10 A is approximately 9 ns.
