NVMFS5826NLT1G
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onsemi NVMFS5826NLT1G

Manufacturer No:
NVMFS5826NLT1G
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 60V 26A SO8FL
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NVMFS5826NLT1G is a high-performance, single N-Channel power MOSFET produced by onsemi. This component is designed in a compact 5x6mm flat lead package, which enhances thermal performance and efficiency. It is particularly suited for applications requiring high current handling and low on-resistance. The MOSFET is ROHS3 compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

ParameterValue
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Continuous Drain Current (Id) @ 25°C26A
Package TypeSO8FL (5x6mm flat lead package)
ROHS StatusROHS3 Compliant

Key Features

  • High current handling capability of up to 26A at 25°C
  • Low on-resistance for efficient power management
  • Compact 5x6mm flat lead package for enhanced thermal performance
  • Wettable Flank Option for improved solderability and inspection
  • Automotive-grade reliability and performance

Applications

The NVMFS5826NLT1G is designed for a variety of applications, including:

  • Automotive systems: power management, motor control, and battery management
  • Industrial power supplies: high-efficiency switching and power conversion
  • Consumer electronics: power management in high-current devices
  • Renewable energy systems: solar and wind power inverters

Q & A

  1. What is the maximum drain to source voltage of the NVMFS5826NLT1G?
    The maximum drain to source voltage is 60V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current rating at 25°C is 26A.
  3. What package type is the NVMFS5826NLT1G available in?
    The NVMFS5826NLT1G is available in a 5x6mm flat lead package (SO8FL).
  4. Is the NVMFS5826NLT1G ROHS compliant?
    Yes, the NVMFS5826NLT1G is ROHS3 compliant.
  5. What are the key applications of the NVMFS5826NLT1G?
    The key applications include automotive systems, industrial power supplies, consumer electronics, and renewable energy systems.
  6. What is the significance of the Wettable Flank Option in the NVMFS5826NLT1G?
    The Wettable Flank Option improves solderability and inspection.
  7. How does the compact package of the NVMFS5826NLT1G benefit its performance?
    The compact 5x6mm package enhances thermal performance and efficiency.
  8. Where can I find detailed specifications and datasheets for the NVMFS5826NLT1G?
    Detailed specifications and datasheets can be found on the onsemi official website and through distributors like Mouser and Heisener.
  9. What is the typical on-resistance of the NVMFS5826NLT1G?
    The typical on-resistance can be found in the datasheet available on the onsemi website and other distributor sites.
  10. Is the NVMFS5826NLT1G suitable for high-power switching applications?
    Yes, it is designed for high-power switching applications due to its high current handling and low on-resistance.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

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350

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Same Series
NVMFS5826NLT3G
NVMFS5826NLT3G
MOSFET N-CH 60V 8A 5DFN
NVMFS5826NLWFT3G
NVMFS5826NLWFT3G
MOSFET N-CH 60V 8A 5DFN
NVMFS5826NLT1G
NVMFS5826NLT1G
MOSFET N-CH 60V 26A SO8FL

Similar Products

Part Number NVMFS5826NLT1G NVMFS5826NLT3G
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 60 V
Current - Continuous Drain (Id) @ 25°C - 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs - 24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id - 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 17 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 850 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 3.6W (Ta), 39W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - 5-DFN (5x6) (8-SOFL)
Package / Case - 8-PowerTDFN, 5 Leads

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