NVMFS3D6N10MCLT1G
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onsemi NVMFS3D6N10MCLT1G

Manufacturer No:
NVMFS3D6N10MCLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 20A/132A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NVMFS3D6N10MCLT1G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is designed to offer superior efficiency and reliability in a variety of power management applications. With its robust specifications and compact DFN package, it is well-suited for demanding environments requiring high current handling and low on-resistance.

Key Specifications

ParameterValue
Channel TypeN Channel
Drain-Source Voltage (Vds)100 V
Continuous Drain Current (Id)132 A
On-Resistance (Rds(on))0.003 ohm
Gate Charge (Qg)60 nC
Minimum Operating Temperature-55°C
Maximum Operating Temperature+175°C
Power Dissipation (Pd)139 W
Package TypeDFN5 5x6, 1.27P (Pb-Free)

Key Features

  • High current handling capability of up to 132 A.
  • Low on-resistance of 0.003 ohm, enhancing efficiency and reducing power losses.
  • Wide operating temperature range from -55°C to +175°C, making it suitable for harsh environments.
  • Compact DFN package for space-saving designs.
  • Pb-Free, compliant with environmental standards.

Applications

The NVMFS3D6N10MCLT1G MOSFET is ideal for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power management.
  • Automotive systems requiring high reliability and performance.
  • Renewable energy systems such as solar and wind power.

Q & A

  1. What is the maximum drain-source voltage of the NVMFS3D6N10MCLT1G MOSFET?
    The maximum drain-source voltage is 100 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is 132 A.
  3. What is the on-resistance (Rds(on)) of the NVMFS3D6N10MCLT1G?
    The on-resistance is 0.003 ohm.
  4. What is the gate charge (Qg) of this MOSFET?
    The gate charge is 60 nC.
  5. What is the operating temperature range of the NVMFS3D6N10MCLT1G?
    The operating temperature range is from -55°C to +175°C.
  6. What type of package does the NVMFS3D6N10MCLT1G come in?
    The package type is DFN5 5x6, 1.27P (Pb-Free).
  7. Is the NVMFS3D6N10MCLT1G Pb-Free?
    Yes, the NVMFS3D6N10MCLT1G is Pb-Free and compliant with environmental standards.
  8. What are some typical applications for the NVMFS3D6N10MCLT1G?
    Typical applications include power supplies, motor control systems, industrial power management, automotive systems, and renewable energy systems.
  9. What is the power dissipation (Pd) of the NVMFS3D6N10MCLT1G?
    The power dissipation is 139 W.
  10. Who is the manufacturer of the NVMFS3D6N10MCLT1G MOSFET?
    The manufacturer is onsemi.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta), 132A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.6mOhm @ 48A, 10V
Vgs(th) (Max) @ Id:3V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4411 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 139W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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