NVD5C632NLT4G
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onsemi NVD5C632NLT4G

Manufacturer No:
NVD5C632NLT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 29A/155A DPAK
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The NVD5C632NLT4G is a single N-Channel Power MOSFET produced by onsemi. This device is designed for low to medium voltage applications and is known for its high current handling and low on-resistance. It is packaged in a TO-263 (D2PAK) package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
ID (Continuous Drain Current)155 A
RDS(ON) (On-Resistance)2.5 mΩ
PD (Power Dissipation)Dependent on package and thermal conditions
PackageTO-263 (D2PAK)
Operating Temperature Range-55°C to 150°C

Key Features

  • High current capability of up to 155 A
  • Low on-resistance of 2.5 mΩ, reducing power losses
  • High voltage rating of 60 V, suitable for various power applications
  • TO-263 (D2PAK) package for efficient heat dissipation and compact design
  • Wide operating temperature range from -55°C to 150°C

Applications

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Switching and power management in industrial and automotive systems
  • High-power audio amplifiers and other high-current applications

Q & A

  1. What is the maximum drain-source voltage of the NVD5C632NLT4G?
    The maximum drain-source voltage is 60 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is 155 A.
  3. What is the on-resistance of the NVD5C632NLT4G?
    The on-resistance is 2.5 mΩ.
  4. In what package is the NVD5C632NLT4G available?
    The NVD5C632NLT4G is available in a TO-263 (D2PAK) package.
  5. What is the operating temperature range of this MOSFET?
    The operating temperature range is from -55°C to 150°C.
  6. What are some common applications for the NVD5C632NLT4G?
    Common applications include power supplies, motor control systems, switching and power management in industrial and automotive systems, and high-power audio amplifiers.
  7. Where can I find detailed specifications for the NVD5C632NLT4G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  8. Is the NVD5C632NLT4G suitable for high-current applications?
    Yes, it is highly suitable for high-current applications due to its 155 A continuous drain current rating.
  9. What are the benefits of the low on-resistance of this MOSFET?
    The low on-resistance reduces power losses and improves efficiency in power management and switching applications.
  10. Can the NVD5C632NLT4G be used in automotive systems?
    Yes, it can be used in automotive systems due to its robust specifications and wide operating temperature range.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:29A (Ta), 155A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:78 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):4W (Ta), 115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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