NVD5C464NT4G
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onsemi NVD5C464NT4G

Manufacturer No:
NVD5C464NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 16A/59A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVD5C464NT4G is an advanced N-channel power MOSFET produced by onsemi. This component is designed to offer high performance and reliability in various power management applications. It features a single N-channel configuration and is housed in a DPAK package, which is lead-free and suitable for high-volume production. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring its suitability for automotive and other demanding environments.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 40 V
VGS (Gate-Source Voltage) ±20 V
ID (Continuous Drain Current) 50 A
RDS(on) (On-Resistance) 4.5
QG (Total Gate Charge) 45 nC
Package DPAK (Lead-Free)

Key Features

The NVD5C464NT4G offers several key features that make it an attractive choice for power management applications:

  • Low RDS(on): Minimizes conduction losses, enhancing overall efficiency.
  • Low QG and Capacitance: Reduces driver losses, making it easier to drive the MOSFET.
  • AEC-Q101 Qualified and PPAP Capable: Ensures the component meets stringent automotive standards, making it reliable for use in automotive and other critical applications.

Applications

The NVD5C464NT4G is suitable for a variety of applications, including:

  • Automotive Systems: Given its AEC-Q101 qualification, it is ideal for use in automotive power management systems, such as battery management, motor control, and power distribution.
  • Industrial Power Management: Its low RDS(on) and low QG make it a good choice for industrial power supplies, motor drives, and other high-power applications.
  • Consumer Electronics: It can be used in power management circuits for consumer electronics, such as power adapters, battery chargers, and other high-current devices.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NVD5C464NT4G?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the package type of the NVD5C464NT4G?

    The package type is DPAK (Lead-Free).

  3. What is the continuous drain current (ID) rating of the NVD5C464NT4G?

    The continuous drain current (ID) rating is 50 A.

  4. Is the NVD5C464NT4G AEC-Q101 qualified?

    Yes, the NVD5C464NT4G is AEC-Q101 qualified.

  5. What are the key features of the NVD5C464NT4G?

    The key features include low RDS(on), low QG and capacitance, and AEC-Q101 qualification.

  6. What are some typical applications of the NVD5C464NT4G?

    Typical applications include automotive systems, industrial power management, and consumer electronics.

  7. What is the total gate charge (QG) of the NVD5C464NT4G?

    The total gate charge (QG) is 45 nC.

  8. Is the NVD5C464NT4G PPAP capable?

    Yes, the NVD5C464NT4G is PPAP capable.

  9. What is the on-resistance (RDS(on)) of the NVD5C464NT4G?

    The on-resistance (RDS(on)) is 4.5 mΩ.

  10. Where can I find detailed specifications for the NVD5C464NT4G?

    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NVD5C464NT4G NVD5C434NT4G NVD5C454NT4G NVD5C460NT4G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 59A (Tc) 163A (Tc) 19A (Ta), 82A (Tc) 18A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 30A, 10V 2.1mOhm @ 50A, 10V 4.2mOhm @ 40A, 10V 4.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 70µA 4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 80.6 nC @ 10 V 32 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V 5400 pF @ 25 V 1900 pF @ 25 V 1600 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 3W (Ta), 40W (Tc) 117W (Tc) 3.1W (Ta), 56W (Tc) 3W (Ta), 47W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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