Overview
The NVATS5A112PLZT4G is a P-Channel Automotive Power MOSFET designed and manufactured by ON Semiconductor. This device is part of the NVATS5A series, known for its compact and efficient design, high thermal performance, and compliance with automotive standards. The NVATS5A112PLZT4G is AEC-Q101 qualified and PPAP capable, making it suitable for a wide range of automotive applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain to Source Voltage | VDSS | 60 | V |
| Gate to Source Voltage | VGSS | ±20 | V |
| Drain Current (DC) | ID | -77 | A |
| Drain Current (Pulse) | IDP | -231 (PW ≤ 10 µs, duty cycle ≤ 1%) | A |
| Power Dissipation | PD | 72 (Tc = 25°C) | W |
| Operating Junction and Storage Temperature | Tj, Tstg | -55 to +175 | °C |
| Avalanche Energy (Single Pulse) | EAS | 95 mJ | mJ |
| Avalanche Current | IAV | -35 A | A |
| Static Drain to Source On-State Resistance | RDS(on) | 10.4 mΩ @ VGS = -10 V | mΩ |
Key Features
- Low On-Resistance: The NVATS5A112PLZT4G features a low on-resistance, which enhances its efficiency in power management applications.
- High Current Capability: With a high continuous drain current of -77 A, this MOSFET is suitable for high-power applications.
- 100% Avalanche Tested: Ensures robustness and reliability under various operating conditions.
- AEC-Q101 Qualified and PPAP Capable: Meets stringent automotive standards, making it reliable for automotive use.
- Pb-Free, Halogen Free, and RoHS Compliance: Environmentally friendly and compliant with global regulations.
- ATPAK Package Compatibility: Pin-compatible with DPAK (TO-252) packages, offering flexibility in design.
Applications
- Reverse Battery Protection: Protects against reverse battery connections in automotive systems.
- Load Switch: Used in load switching applications where high current and low on-resistance are required.
- Automotive Front Lighting: Suitable for lighting systems in vehicles due to its high current capability and thermal performance.
- Automotive Body Controllers: Used in various body control modules in vehicles for reliable power management.
Q & A
- What is the maximum drain to source voltage of the NVATS5A112PLZT4G?
The maximum drain to source voltage (VDSS) is 60 V.
- What is the continuous drain current rating of this MOSFET?
The continuous drain current (ID) is -77 A.
- Is the NVATS5A112PLZT4G AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What is the typical on-resistance of this MOSFET?
The typical on-resistance (RDS(on)) is 10.4 mΩ at VGS = -10 V.
- What are the operating junction and storage temperatures for this device?
The operating junction and storage temperatures range from -55 to +175°C.
- Is the NVATS5A112PLZT4G Pb-Free, Halogen Free, and RoHS compliant?
Yes, it is Pb-Free, Halogen Free, and RoHS compliant.
- What package type is the NVATS5A112PLZT4G available in?
The device is available in the ATPAK package, which is pin-compatible with DPAK (TO-252) packages.
- What are some typical applications of the NVATS5A112PLZT4G?
Typical applications include reverse battery protection, load switching, automotive front lighting, and automotive body controllers.
- What is the avalanche energy rating of this MOSFET?
The avalanche energy (EAS) is 95 mJ.
- Can the NVATS5A112PLZT4G be used in non-automotive applications?
While it is primarily designed for automotive use, it can be used in other high-power applications where its specifications are suitable.
