NVATS5A114PLZT4G
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onsemi NVATS5A114PLZT4G

Manufacturer No:
NVATS5A114PLZT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CHANNEL 60V 60A ATPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVATS5A114PLZT4G is a high-performance P-channel MOSFET designed and manufactured by onsemi. This component is part of onsemi's Automotive, AEC-Q101 series, ensuring it meets stringent automotive standards. Although this product is currently obsolete and no longer manufactured, it remains relevant for existing designs and maintenance purposes.

Key Specifications

AttributeValue
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current60 A
Power Dissipation (Tc)72 W
PackagingTape & Reel (TR), ATPAK

Key Features

  • High-performance P-channel MOSFET with a 60V rating, ensuring robust operation in various applications.
  • Continuous drain current of 60 A, suitable for high-current applications.
  • Power dissipation of 72 W at the case temperature (Tc), enhancing thermal management.
  • Surface mount ATPAK package for efficient board space utilization and ease of assembly.
  • Compliance with AEC-Q101 automotive standards, making it suitable for automotive and other demanding environments.

Applications

The NVATS5A114PLZT4G is designed for use in a variety of applications, including:

  • Automotive systems: Such as power management, motor control, and battery management.
  • Industrial power systems: Including power supplies, motor drives, and DC-DC converters.
  • Consumer electronics: Where high current and voltage handling are required.
  • Renewable energy systems: Such as solar and wind power systems.

Q & A

  1. What is the transistor polarity of the NVATS5A114PLZT4G?
    The transistor polarity is P-Channel.
  2. What is the drain-source breakdown voltage (Vds) of the NVATS5A114PLZT4G?
    The drain-source breakdown voltage is 60 V.
  3. What is the continuous drain current (Id) of the NVATS5A114PLZT4G?
    The continuous drain current is 60 A.
  4. What is the power dissipation (Tc) of the NVATS5A114PLZT4G?
    The power dissipation at the case temperature (Tc) is 72 W.
  5. What packaging options are available for the NVATS5A114PLZT4G?
    The component is available in Tape & Reel (TR) packaging with an ATPAK package.
  6. Is the NVATS5A114PLZT4G compliant with automotive standards?
    Yes, it is compliant with AEC-Q101 automotive standards.
  7. What are some typical applications for the NVATS5A114PLZT4G?
    Typical applications include automotive systems, industrial power systems, consumer electronics, and renewable energy systems.
  8. Is the NVATS5A114PLZT4G still in production?
    No, the NVATS5A114PLZT4G is currently obsolete and no longer manufactured.
  9. Why is the NVATS5A114PLZT4G still relevant despite being obsolete?
    It remains relevant for existing designs and maintenance purposes.
  10. Where can I find detailed specifications for the NVATS5A114PLZT4G?
    Detailed specifications can be found on official onsemi documents, as well as on websites like Digi-Key, Mouser, and other electronic component distributors.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 28A, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4000 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):72W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ATPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NVATS5A114PLZT4G NVATS5A112PLZT4G NVATS5A113PLZT4G
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Ta) 27A (Ta) 38A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 28A, 10V 43mOhm @ 13A, 10V 29.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA 2.6V @ 1mA 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V 33.5 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 20 V 1450 pF @ 20 V 2400 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 72W (Tc) 48W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package ATPAK DPAK/ATPAK ATPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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