NVATS5A114PLZT4G
  • Share:

onsemi NVATS5A114PLZT4G

Manufacturer No:
NVATS5A114PLZT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CHANNEL 60V 60A ATPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVATS5A114PLZT4G is a high-performance P-channel MOSFET designed and manufactured by onsemi. This component is part of onsemi's Automotive, AEC-Q101 series, ensuring it meets stringent automotive standards. Although this product is currently obsolete and no longer manufactured, it remains relevant for existing designs and maintenance purposes.

Key Specifications

AttributeValue
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current60 A
Power Dissipation (Tc)72 W
PackagingTape & Reel (TR), ATPAK

Key Features

  • High-performance P-channel MOSFET with a 60V rating, ensuring robust operation in various applications.
  • Continuous drain current of 60 A, suitable for high-current applications.
  • Power dissipation of 72 W at the case temperature (Tc), enhancing thermal management.
  • Surface mount ATPAK package for efficient board space utilization and ease of assembly.
  • Compliance with AEC-Q101 automotive standards, making it suitable for automotive and other demanding environments.

Applications

The NVATS5A114PLZT4G is designed for use in a variety of applications, including:

  • Automotive systems: Such as power management, motor control, and battery management.
  • Industrial power systems: Including power supplies, motor drives, and DC-DC converters.
  • Consumer electronics: Where high current and voltage handling are required.
  • Renewable energy systems: Such as solar and wind power systems.

Q & A

  1. What is the transistor polarity of the NVATS5A114PLZT4G?
    The transistor polarity is P-Channel.
  2. What is the drain-source breakdown voltage (Vds) of the NVATS5A114PLZT4G?
    The drain-source breakdown voltage is 60 V.
  3. What is the continuous drain current (Id) of the NVATS5A114PLZT4G?
    The continuous drain current is 60 A.
  4. What is the power dissipation (Tc) of the NVATS5A114PLZT4G?
    The power dissipation at the case temperature (Tc) is 72 W.
  5. What packaging options are available for the NVATS5A114PLZT4G?
    The component is available in Tape & Reel (TR) packaging with an ATPAK package.
  6. Is the NVATS5A114PLZT4G compliant with automotive standards?
    Yes, it is compliant with AEC-Q101 automotive standards.
  7. What are some typical applications for the NVATS5A114PLZT4G?
    Typical applications include automotive systems, industrial power systems, consumer electronics, and renewable energy systems.
  8. Is the NVATS5A114PLZT4G still in production?
    No, the NVATS5A114PLZT4G is currently obsolete and no longer manufactured.
  9. Why is the NVATS5A114PLZT4G still relevant despite being obsolete?
    It remains relevant for existing designs and maintenance purposes.
  10. Where can I find detailed specifications for the NVATS5A114PLZT4G?
    Detailed specifications can be found on official onsemi documents, as well as on websites like Digi-Key, Mouser, and other electronic component distributors.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 28A, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4000 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):72W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ATPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
409

Please send RFQ , we will respond immediately.

Similar Products

Part Number NVATS5A114PLZT4G NVATS5A112PLZT4G NVATS5A113PLZT4G
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Ta) 27A (Ta) 38A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 28A, 10V 43mOhm @ 13A, 10V 29.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA 2.6V @ 1mA 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V 33.5 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 20 V 1450 pF @ 20 V 2400 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 72W (Tc) 48W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package ATPAK DPAK/ATPAK ATPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK

Related Product By Brand

SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD