NVATS5A108PLZT4G
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onsemi NVATS5A108PLZT4G

Manufacturer No:
NVATS5A108PLZT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CHANNEL 40V 77A ATPAK
Delivery:
Payment:
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Product Introduction

Overview

The NVATS5A108PLZT4G is a P-Channel Automotive Power MOSFET designed and manufactured by ON Semiconductor. This device is optimized for compact and efficient designs, featuring high thermal performance and AEC-Q101 qualification, making it suitable for various automotive applications. The MOSFET is packaged in an ATPAK package, which is pin-compatible with the DPAK (TO-252) package, and is Pb-Free, Halogen Free, and RoHS compliant.

Key Specifications

ParameterSymbolValueUnit
Drain to Source VoltageVDSS-40V
Gate to Source VoltageVGSS±20V
Drain Current (DC)ID-77A
Drain Current (Pulse)IDP-231 (PW ≤ 10 μs, duty cycle ≤ 1%)A
Power DissipationPD72W
Operating Junction and Storage TemperatureTj, Tstg-55 to +175°C
Avalanche Energy (Single Pulse)EAS95mJ
Avalanche CurrentIAV-35A
Static Drain to Source On-State ResistanceRDS(on)10.4 mΩ @ VGS = -10 V
Junction to Case Thermal ResistanceRθJC2.0°C/W
Junction to Ambient Thermal ResistanceRθJA79.6°C/W

Key Features

  • Low On-Resistance: 10.4 mΩ at VGS = -10 V
  • High Current Capability: Up to -77 A DC and -231 A pulse current
  • 100% Avalanche Tested
  • AEC-Q101 qualified and PPAP capable, suitable for automotive applications
  • ATPAK package is pin-compatible with DPAK (TO-252)
  • Pb-Free, Halogen Free, and RoHS compliant

Applications

  • Reverse Battery Protection
  • Load Switch
  • Automotive Front Lighting
  • Automotive Body Controllers

Q & A

  1. What is the maximum drain to source voltage of the NVATS5A108PLZT4G? The maximum drain to source voltage is -40 V.
  2. What is the maximum continuous drain current? The maximum continuous drain current is -77 A.
  3. Is the NVATS5A108PLZT4G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
  4. What is the typical on-resistance of the MOSFET? The typical on-resistance is 10.4 mΩ at VGS = -10 V.
  5. What are the typical applications of this MOSFET? Typical applications include reverse battery protection, load switch, automotive front lighting, and automotive body controllers.
  6. What is the junction to case thermal resistance? The junction to case thermal resistance is 2.0 °C/W.
  7. Is the NVATS5A108PLZT4G Pb-Free and RoHS compliant? Yes, it is Pb-Free, Halogen Free, and RoHS compliant.
  8. What is the maximum power dissipation? The maximum power dissipation is 72 W.
  9. What is the operating junction and storage temperature range? The operating junction and storage temperature range is -55 to +175 °C.
  10. Can this MOSFET be used in life support systems or medical devices? No, ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:77A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.4mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:79.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3850 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):72W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ATPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NVATS5A108PLZT4G NVATS5A106PLZT4G NVATS5A107PLZT4G
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 77A (Ta) 33A (Ta) 55A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.4mOhm @ 35A, 10V 25mOhm @ 15A, 10V 17mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA 2.6V @ 1mA 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 79.5 nC @ 10 V 29 nC @ 10 V 47 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3850 pF @ 20 V 1380 pF @ 20 V 2400 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 72W (Tc) 48W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package ATPAK DPAK/ATPAK ATPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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